Invention Grant
- Patent Title: Forming zig-zag trench structure to prevent aspect ratio trapping defect escape
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Application No.: US15425338Application Date: 2017-02-06
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Publication No.: US09947532B2Publication Date: 2018-04-17
- Inventor: Judson R. Holt , Shogo Mochizuki , Alexander Reznicek , Melissa A. Smith
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick, LLC
- Agent Younmin Cai
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20 ; H01L21/02 ; H01L21/76 ; H01L29/06 ; H01L21/3065 ; H01L21/306 ; H01L21/762
Abstract:
A method of fabricating a semiconductor device can include the following steps: (i) providing an initial sub-assembly including a trench-defining layer having a top surface; (ii) refining the initial sub-assembly into a first trench-cut intermediate sub-assembly by removing material to form an upper tier of a trench extending downward from the top surface of the trench-defining layer, the upper tier of the trench including two lateral trench surfaces and a bottom trench surface; and (iii) refining the first trench-cut intermediate sub-assembly into a second trench-cut intermediate sub-assembly by selectively removing material in a downwards direction starting from the bottom surface of the trench to form a lower tier of the trench, with the selective removal of material leaving at least a first defect blocking member in the lower tier of the trench.
Public/Granted literature
- US20170148661A1 ZIG-ZAG TRENCH STRUCTURE TO PREVENT ASPECT RATIO TRAPPING DEFECT ESCAPE Public/Granted day:2017-05-25
Information query
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