A semiconductor structure is provided. The semiconductor structure includes a conductive strip, a conductive layer, a first dielectric layer, and a second dielectric layer. The first dielectric layer is between the conductive strip and the conductive layer arranged in a crisscross manner. The second dielectric layer is different from the first dielectric layer. The second dielectric layer and the first dielectric layer are adjoined with the conductive strip in different positions on the same sidewall of the conductive strip.