Invention Grant
- Patent Title: Device with diffusion blocking layer in source/drain region
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Application No.: US15019273Application Date: 2016-02-09
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Publication No.: US09947788B2Publication Date: 2018-04-17
- Inventor: Shesh Mani Pandey , Pei Zhao , Baofu Zhu , Francis L. Benistant
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/16 ; H01L29/165 ; H01L29/66
Abstract:
A method includes forming a gate electrode structure above a channel region defined in a semiconductor material. The semiconductor material is recessed in a source/drain region. A first material is epitaxially grown in the source/drain region. The first material includes a dopant species having a first concentration. A diffusion blocking layer is formed in the source/drain region above the first material. A second material is epitaxially grown in the source/drain region above the diffusion blocking layer. The second material comprises the dopant species having a second concentration greater than the first concentration.
Public/Granted literature
- US20170229578A1 DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION Public/Granted day:2017-08-10
Information query
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