Invention Grant
- Patent Title: Semiconductor device having multiple insulating films of varying thickness
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Application No.: US15397401Application Date: 2017-01-03
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Publication No.: US09958719B2Publication Date: 2018-05-01
- Inventor: Yuki Matsuura , Osamu Itou
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-006120 20160115
- Main IPC: G02F1/1368
- IPC: G02F1/1368 ; G02F1/1333 ; G02F1/1343 ; G02F1/1362 ; H01L27/12 ; G02F1/1339

Abstract:
According to one embodiment, a display device includes an insulating substrate, a first insulating film, a second insulating film, a third insulating film, a fourth insulating film, a fifth insulating film, a sixth insulating film, a color filter layer, a semiconductor layer disposed between the second insulating film and the third insulating film, and a gate electrode disposed between the third insulating film and the fourth insulating film, wherein the first, fourth, and sixth insulating films are formed of a silicon nitride, and the second, third, and fifth insulating films are formed of a silicon oxide.
Public/Granted literature
- US20170205660A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-20
Information query
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