Invention Grant
- Patent Title: Two-step fluorine radical etch of hafnium oxide
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Application No.: US15161783Application Date: 2016-05-23
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Publication No.: US09960049B2Publication Date: 2018-05-01
- Inventor: Hanshen Zhang , Jie Liu , Zhenjiang Cui
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; H01J37/32
Abstract:
In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The plasma comprises fluorine radicals and fluorine ions. The fluorine ions are removed from the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions. A substrate comprising a metal-containing layer is exposed to the reactive gas. The reactive gas dopes at least a portion of the metal-containing layer to form a metal-containing layer doped with fluorine radicals. The metal-containing layer doped with fluorine radicals is exposed to a nitrogen and hydrogen containing gas mixture and the reactive gas to remove at least a portion of the metal-containing layer doped with fluorine radicals.
Public/Granted literature
- US20170338119A1 TWO-STEP FLUORINE RADICAL ETCH OF HAFNIUM OXIDE Public/Granted day:2017-11-23
Information query
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