Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15259024Application Date: 2016-09-07
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Publication No.: US09960112B2Publication Date: 2018-05-01
- Inventor: Chanho Lee , Hyunsoo Chung , Myeong Soon Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0171647 20151203
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/498 ; H01L23/00

Abstract:
A semiconductor device comprising: a substrate; a decoupling capacitor disposed on the substrate; a first connection pad vertically overlapping with the decoupling capacitor; a passivation layer exposing a portion of the first connection pad; and a first solder bump disposed on the first connection pad and covering a portion of a top surface of the passivation layer.
Public/Granted literature
- US20170162500A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-06-08
Information query
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