- 专利标题： Semiconductor device
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申请号： US15235756申请日： 2016-08-12
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公开(公告)号： US09960572B2公开(公告)日： 2018-05-01
- 发明人: Masayuki Iwami , Hirotatsu Ishii , Norihiro Iwai , Takeyoshi Matsuda , Akihiko Kasukawa , Takuya Ishikawa , Yasumasa Kawakita , Eisaku Kaji
- 申请人： FURUKAWA ELECTRIC CO., LTD.
- 申请人地址： JP Tokyo
- 专利权人： FURUKAWA ELECTRIC CO., LTD.
- 当前专利权人： FURUKAWA ELECTRIC CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2014-047339 20140311
- 主分类号： H01S5/343
- IPC分类号： H01S5/343 ; H01L29/778 ; H01L29/201 ; H01L29/868 ; H01S5/227 ; H01S5/30 ; H01L29/04 ; H01L29/205 ; H01L31/0304 ; H01L31/036 ; H01L31/105 ; H01L29/36 ; H01S5/32 ; H01S5/22 ; H01L21/02
摘要：
A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.
公开/授权文献
- US20160351392A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-12-01
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