Methods for forming semiconductor devices, such as FinFET devices, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets and a bottom surface including two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed by an isotropic plasma etch process. The isotropic plasma etch process may be performed at a pressure ranging from about 5 mTorr to about 200 mTorr in order to maximize the amount of radicals while minimizing the amount of ions in the plasma. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.