公开(公告)号：US12110589B2

公开(公告)日：2024-10-08

申请号：US16631979

申请日：2018-08-01

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Wei Liu ,  Li-Qun Xia

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/403 ,  C23C16/4554 ,  C23C16/45548 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/0234

Abstract: Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.

公开(公告)号：USD1034491S1

公开(公告)日：2024-07-09

申请号：US29744119

申请日：2020-07-27

Applicant: Applied Materials, Inc.

Designer： Kin Pong Lo ,  Vladimir Nagorny ,  Wei Liu ,  Theresa Kramer Guarini ,  Bernard L. Hwang ,  Malcolm J. Bevan ,  Jacob Abraham ,  Swayambhu Prasad Behera

Abstract: FIG. 1 is a front isometric top view of an edge ring.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a first side view thereof.
FIG. 5 is a second side view thereof.
FIG. 6 is an enlarged partial view of the section 6 shown in FIG. 1.
FIG. 7 is a cross sectional view along line 7-7 of FIG. 2 thereof.
FIG. 8 is an enlarged partial side view thereof.
FIG. 9 is an enlarged partial view of the section 9 shown in FIG. 2.
FIG. 10 is an enlarged partial cross sectional view of the section 10 shown in FIG. 7.
FIG. 11 is another front isometric top view thereof assembled with an overhang ring.
FIG. 12 is another top plan view thereof assembled with the overhang ring.
FIG. 13 is a third side view thereof assembled with the overhang ring; and,
FIG. 14 is an enlarged partial cross sectional view along line 14-14 of FIG. 12 thereof assembled with an overhang ring.
The broken lines appearing in FIGS. 1-14 illustrate portions of the edge ring assembly that form no part of the claimed design. The dot-dot-dash broken lines show boundaries of cross sectional or enlarged views that form no part of the claimed design.

公开(公告)号：US20230215702A1

公开(公告)日：2023-07-06

申请号：US17566584

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George ,  Wei Liu

IPC: H01J37/32 ,  H01L21/66 ,  G06N3/08

CPC classification number: H01J37/32486 ,  H01J37/32467 ,  H01L22/20 ,  G06N3/08 ,  H01J2237/3387

Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disposed within the processing chamber to plasma related fluxes. The first material has a first set of recombination coefficients associated with the plasma related fluxes. The plasma processing system further includes a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes. The second set of plasma recombination coefficients is different that the first set of plasma recombination coefficients.

公开(公告)号：US20230178365A1

公开(公告)日：2023-06-08

申请号：US17994592

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Fredrick Fishburn ,  Hailing Liu

IPC: H01L21/02

CPC classification number: H01L21/02247 ,  H01L21/02153 ,  H01L21/0217 ,  H01L21/02252

Abstract: Semiconductor devices and methods of forming semiconductor devices are described. A method of forming metal silicon nitride films is disclosed. Some embodiments of the disclosure provide a process using ammonia plasma for treating a metal silicide or metal film to form a metal silicon nitride film. The ammonia plasma treatment generates NH* radicals that diffuse through the metal silicide to form a metal silicon nitride film that is substantially free of silicon nitride (SiN). The metal silicon nitride films have improved resistance relative to films deposited by thermal processes or plasma processes with a nitrogen plasma exposure.

公开(公告)号：US09530898B2

公开(公告)日：2016-12-27

申请号：US14515767

申请日：2014-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Udayan Ganguly ,  Yoshitaka Yokota ,  Jing Tang ,  Sunderraj Thirupapuliyur ,  Christopher Sean Olsen ,  Shiyu Sun ,  Tze Wing Poon ,  Wei Liu ,  Johanes Swenberg ,  Vicky U. Nguyen ,  Swaminathar Srinivasan ,  Jacob Newman

IPC: H01L29/788 ,  H01L21/67 ,  H01L21/762 ,  H01L27/115

CPC classification number: H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US09355820B2

公开(公告)日：2016-05-31

申请号：US14484397

申请日：2014-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Wei Liu ,  Naomi Yoshida ,  Mandar Balasaheb Pandit

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/8238

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823828

Abstract: Embodiments of methods for removing carbon-containing films are provided herein. In some embodiments, a method for removing a carbon-containing layer includes providing an ammonia containing process gas to a process chamber having a substrate with a silicon oxide layer disposed atop the substrate and a carbon-containing layer disposed atop the silicon oxide layer disposed in the process chamber; providing RF power to the process chamber to ignite the ammonia containing process gas to form a plasma; and exposing the substrate to NH and/or NH2 radicals and hydrogen radicals formed in the plasma to remove the carbon-containing layer.

Abstract translation: 本文提供了用于除去含碳膜的方法的实施方案。 在一些实施方案中，用于除去含碳层的方法包括向具有衬底的处理室提供含氨工艺气体，所述衬底具有设置在衬底顶部的氧化硅层和设置在设置在衬底上的氧化硅层顶部的含碳层 处理室; 向处理室提供RF功率以点燃含氨工艺气体以形成等离子体; 并将衬底暴露于NH和/或NH 2基团和在等离子体中形成的氢原子以除去含碳层。

公开(公告)号：US20220375753A1

公开(公告)日：2022-11-24

申请号：US17882177

申请日：2022-08-05

Applicant: Applied Materials, Inc.

Inventor： Wolfgang Aderhold ,  Yi-Chiau Huang ,  Wei Liu ,  Benjamin Colombeau ,  Abhilash Mayur

IPC: H01L21/225 ,  H01L21/324

Abstract: A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

公开(公告)号：US11437271B2

公开(公告)日：2022-09-06

申请号：US16867092

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Srinivas Gandikota ,  Wei Liu

IPC: H01L21/768 ,  H01L21/321

Abstract: Methods for filling a substrate feature with a seamless gap fill are described. Methods comprise forming a metal film a substrate surface, the sidewalls and the bottom surface of a feature, the metal film having a void located within the width of the feature; treating the metal film with a plasma; and annealing the metal film to remove the void.

公开(公告)号：US20220223381A1

公开(公告)日：2022-07-14

申请号：US17149232

申请日：2021-01-14

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Vladimir Nagorny ,  Rene George

IPC: H01J37/32 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

公开(公告)号：US11101128B1

公开(公告)日：2021-08-24

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei Liu ,  Yuan-hui Lo ,  Srinivas Gandikota ,  Jacqueline Samantha Wrench ,  Yongjing Lin ,  Wen Ting Chen ,  ShihChung Chen

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.