Invention Grant
- Patent Title: Semiconductor device with gate structures having low-K spacers on sidewalls and electrical contacts therebetween
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Application No.: US15096681Application Date: 2016-04-12
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Publication No.: US09966374B2Publication Date: 2018-05-08
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Charan Veera Venkata Satya Surisetty
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotskowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/417 ; H01L27/088 ; H01L29/66 ; H01L21/8234 ; H01L29/49 ; H01L21/768
Abstract:
A semiconductor device includes gates and a low-k spacer. The low-k spacer includes low-k spacer portions formed upon the gate sidewalls and a low-k spacer portion formed upon a top surface of an underlying substrate adjacent to the gates. When a structure has previously undergone a gate processing fabrication stage, the gates and at least a portion of the top surface of the substrate may be exposed thereby allowing the formation of the low-k spacer. This exposure may include removing any original gate spacers, removing an original liner formed upon the original spacers, and removing any original fill material formed upon the liner.
Public/Granted literature
- US20160225766A1 SEMICONDUCTOR DEVICE WITH LOW-K SPACER Public/Granted day:2016-08-04
Information query
IPC分类:
