Invention Grant
- Patent Title: Atomic layer etching of tungsten for enhanced tungsten deposition fill
-
Application No.: US14830683Application Date: 2015-08-19
-
Publication No.: US09972504B2Publication Date: 2018-05-15
- Inventor: Chiukin Steven Lai , Keren Jacobs Kanarik , Samantha Tan , Anand Chandrashekar , Teh-tien Su , Wenbing Yang , Michael Wood , Michal Danek
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/3213 ; H01L21/285
Abstract:
Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.
Public/Granted literature
- US20170040214A1 ATOMIC LAYER ETCHING OF TUNGSTEN FOR ENHANCED TUNGSTEN DEPOSITION FILL Public/Granted day:2017-02-09
Information query
IPC分类:
