公开(公告)号：US20200075403A1

公开(公告)日：2020-03-05

申请号：US16676169

申请日：2019-11-06

Applicant: Lam Research Corporation

Inventor： Shruti Vivek Thombare ,  Raashina Humayun ,  Michal Danek ,  Chiukin Steven Lai ,  Joshua Collins ,  Hanna Bamnolker ,  Griffin John Kennedy ,  Gorun Butail ,  Patrick A. van Cleemput

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/522

Abstract: Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

公开(公告)号：US20180286746A1

公开(公告)日：2018-10-04

申请号：US15474383

申请日：2017-03-30

Applicant: Lam Research Corporation

Inventor： Jeong-Seok Na ,  Megha Rathod ,  Chiukin Steven Lai ,  Raashina Humayun

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  C23C16/455 ,  C23C16/36

CPC classification number: H01L21/76843 ,  C23C16/36 ,  C23C16/45536 ,  H01L21/02175 ,  H01L21/0228 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/5329

Abstract: Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.

公开(公告)号：US20250038003A1

公开(公告)日：2025-01-30

申请号：US18716846

申请日：2022-12-02

Applicant: Lam Research Corporation

Inventor： David Joseph Mandia ,  Kyle Jordan Blakeney ,  Chiukin Steven Lai

IPC: H01L21/285 ,  C23C16/42 ,  C23C16/455 ,  C23C16/52

Abstract: Molybdenum-containing films are deposited on semiconductor substrates at relatively low temperatures of between about 100 and about 500° C., such as between about 200 and about 450° C. For example, molybdenum metal can be deposited at this temperature on a substrate having exposed metal and exposed dielectric in a substantially non-selective manner. In one implementation, a substrate having a recessed feature is provided, where the recessed feature has an exposed dielectric on the sidewalls and an exposed metal on the bottom. The substrate is exposed to a molybdenum-containing precursor, a reducing agent, and a silicon-containing reagent, to thereby reduce the molybdenum-containing precursor and form a molybdenum-containing layer that includes metallic molybdenum. The use of the silicon-containing reactant leads to a reduction in on-metal/on-dielectric selectivity of molybdenum deposition.

公开(公告)号：US20170330797A1

公开(公告)日：2017-11-16

申请号：US15592046

申请日：2017-05-10

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Jeong-Seok Na ,  Raashina Humayun ,  Michal Danek ,  Kaihan Abidi Ashtiani

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/18 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/505 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76801 ,  H01L21/76831 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76883 ,  H01L23/53209

Abstract: Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.

公开(公告)号：US20150037972A1

公开(公告)日：2015-02-05

申请号：US14446203

申请日：2014-07-29

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Juwen Gao ,  Aaron Fellis ,  Francisco Juarez ,  Chiukin Steven Lai

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  C23F4/00

CPC classification number: H01L21/76841 ,  C23G5/00 ,  H01L21/02063 ,  H01L21/76814

Abstract: Described are cleaning methods for removing contaminants from an electrical contact interface of a partially fabricated semiconductor substrate. The methods may include introducing a halogen-containing species into a processing chamber, and forming an adsorption-limited layer, which includes halogen from the halogen-containing species, atop the electrical contact interface and/or the contaminants thereon. The methods may further include thereafter removing un-adsorbed halogen-containing species from the processing chamber and activating a reaction between the halogen of the adsorption-limited layer and the contaminants present on the electrical contact interface. The reaction may then result in the removal of at least a portion of the contaminants from the electrical contact interface. In some embodiments, the halogen adsorbed onto the surface and reacted may be fluorine. Also described herein are apparatuses having controllers for implementing such electrical contact interface cleaning techniques.

Abstract translation: 描述了从部分制造的半导体衬底的电接触界面去除污染物的清洁方法。 所述方法可以包括将含卤素的物质引入处理室，以及形成吸附限制层，其包括来自含卤物质的卤素，位于电接触界面上和/或其上的污染物上。 所述方法还可以包括从处理室中除去未吸附的含卤物质并且激活吸附限制层的卤素与存在于电接触界面上的污染物之间的反应。 反应可能导致从电接触界面去除至少一部分污染物。 在一些实施方案中，吸附在表面上并被反应的卤素可以是氟。 这里还描述了具有用于实现这种电接触界面清洁技术的控制器的装置。

公开(公告)号：US20220298624A1

公开(公告)日：2022-09-22

申请号：US17753042

申请日：2020-08-10

Applicant: Lam Research Corporation

Inventor： Kyle Jordan Blakeney ,  Chiukin Steven Lai ,  Thomas M. Pratt ,  Eric H. Lenz ,  Jason Stevens

IPC: C23C16/06 ,  C23C16/30 ,  C23C16/34 ,  C23C16/455 ,  H01L21/285 ,  H01L21/28

Abstract: Substantially carbon-free molybdenum-containing and tungsten-containing films are deposited on semiconductor substrates using halide-free metalorganic precursors. The precursors do not include metal-carbon bonds, carbonyl ligands, and, preferably do not include beta-hydrogen atoms. Metal-containing films, such as molybdenum nitride, molybdenum oxynitride, molybdenum silicide, and molybdenum boride with carbon content of less than about 5% atomic, such as less than about 3% atomic are deposited. The films are deposited in some embodiments by reacting the metal-containing precursor with a reactant on a surface of a substrate in an absence of plasma, e.g. using several ALD cycles. In some embodiments the formed film is then treated with a second reactant in a plasma to modify its properties (e.g., to densify the film, to reduce resistivity of the film, or to increase its work function). The films can be used as liners, diffusion barriers, and as electrode material in pMOS devices.

公开(公告)号：US10229826B2

公开(公告)日：2019-03-12

申请号：US15729081

申请日：2017-10-10

Applicant: Lam Research Corporation

Inventor： Raihan Tarafdar ,  Shruti Thombare ,  Jeong-Seok Na ,  Raashina Humayun ,  Chiukin Steven Lai

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/768

Abstract: A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes a material selected from a group consisting of tantalum nitride, titanium nitride, tantalum and titanium. The method includes b) supplying a gas selected from a group consisting of hydrazine, a gas including fluorine species, a gas including chlorine species, derivatives of hydrazine, ammonia, carbon monoxide, a gas including amidinates, and/or a gas including metal organic ligands to the processing chamber for a predetermined period to remove oxidation from the barrier layer. The method includes c) depositing a metal layer on the barrier layer after b). The metal layer includes a metal selected from a group consisting of cobalt, copper, tungsten, ruthenium, rhodium, molybdenum, and nickel.

公开(公告)号：US09972504B2

公开(公告)日：2018-05-15

申请号：US14830683

申请日：2015-08-19

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/285

CPC classification number: H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US20170040214A1

公开(公告)日：2017-02-09

申请号：US14830683

申请日：2015-08-19

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/768 ,  H01L21/3213

CPC classification number: H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

Abstract translation: 本文提供了使用将各种沉积技术与蚀刻期间表面改性和去除的交替脉冲集成在一起的去蚀刻 - 脱除工艺将钨沉积成高纵横比特征的方法。

公开(公告)号：US20160056077A1

公开(公告)日：2016-02-25

申请号：US14873152

申请日：2015-10-01

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Jeong-Seok Na ,  Raihan Tarafdar ,  Raashina Humayun ,  Michal Danek

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02 ,  H01L21/288 ,  H01L21/285

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76876 ,  H01L23/53266

Abstract: Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors. Methods may also involve using a remote plasma source to generate the nitrogen-based plasma. Methods also involve annealing the substrate.

Abstract translation: 本文提供了将无空隙钴沉积到具有高纵横比的特征中的方法。 方法包括：（a）用钴部分填充特征，（b）将特征暴露于由含氮气体产生的等离子体，以选择性地抑制在特征附近或顶部的表面上的钴成核，任选地重复（a）和（ b），并通过化学气相沉积将体积钴沉积到特征中。 方法还可以包括将包含阻挡层的特征暴露于由含氮气体产生的等离子体以选择性地抑制钴成核。 所述方法可以使用含钴前体在低于约400℃的低温下进行。 方法还可以包括使用远程等离子体源来产生氮基等离子体。 方法还包括使基板退火。