Invention Grant
- Patent Title: Layer structure for mounting semiconductor device and fabrication method thereof
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Application No.: US14290217Application Date: 2014-05-29
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Publication No.: US09972564B2Publication Date: 2018-05-15
- Inventor: Fang-Lin Tsai , Yi-Feng Chang , Cheng-Jen Liu , Yi-Min Fu , Hung-Chi Chen
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103101747A 20140117
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L29/78 ; H01L21/265 ; H01L29/762 ; H01L21/48

Abstract:
A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.
Public/Granted literature
- US20150206814A1 LAYER STRUCTURE FOR MOUNTING SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2015-07-23
Information query
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