公开(公告)号：US09972564B2

公开(公告)日：2018-05-15

申请号：US14290217

申请日：2014-05-29

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Fang-Lin Tsai ,  Yi-Feng Chang ,  Cheng-Jen Liu ,  Yi-Min Fu ,  Hung-Chi Chen

IPC: H01L23/498 ,  H01L29/78 ,  H01L21/265 ,  H01L29/762 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/26533 ,  H01L21/486 ,  H01L29/762 ,  H01L29/7834 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.

公开(公告)号：US20150206814A1

公开(公告)日：2015-07-23

申请号：US14290217

申请日：2014-05-29

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

Inventor： Fang-Lin Tsai ,  Yi-Feng Chang ,  Cheng-Jen Liu ,  Yi-Min Fu ,  Hung-Chi Chen

IPC: H01L23/14 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/26533 ,  H01L21/486 ,  H01L29/762 ,  H01L29/7834 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.

Abstract translation: 提供一种用于安装半导体器件的层结构的制造方法，其包括以下步骤：提供基材，其中所述基材具有导电层，所述导电层具有第一表面，所述第一表面具有多个第一导电元件和相对的第二表面 具有多个第二导电元件，以及第一密封剂，其形成在所述导电层的第一表面上，用于封装所述第一导电元件; 部分去除所述导电层以形成电连接所述第一导电元件和所述第二导电元件的电路层; 以及在所述第一密封剂的底表面上形成用于封装所述电路层和所述第二导电元件的第二密封剂，从而降低制造难度并提高产品产率。

公开(公告)号：US20180233442A1

公开(公告)日：2018-08-16

申请号：US15950734

申请日：2018-04-11

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Fang-Lin Tsai ,  Yi-Feng Chang ,  Cheng-Jen Liu ,  Yi-Min Fu ,  Hung-Chi Chen

IPC: H01L23/498 ,  H01L21/265 ,  H01L29/78 ,  H01L29/762 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/26533 ,  H01L21/486 ,  H01L29/762 ,  H01L29/7834 ,  H01L2224/16225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.

公开(公告)号：US10396021B2

公开(公告)日：2019-08-27

申请号：US15950734

申请日：2018-04-11

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Fang-Lin Tsai ,  Yi-Feng Chang ,  Cheng-Jen Liu ,  Yi-Min Fu ,  Hung-Chi Chen

IPC: H01L21/48 ,  H01L29/78 ,  H01L21/265 ,  H01L23/498 ,  H01L29/762

Abstract: A fabrication method of a layer structure for mounting a semiconductor device is provided, which includes the steps of: providing a base material, wherein the base material has a conductive layer having a first surface having a plurality of first conductive elements and an opposite second surface having a plurality of second conductive elements, and a first encapsulant formed on the first surface of the conductive layer for encapsulating the first conductive elements; partially removing the conductive layer to form a circuit layer that electrically connects the first conductive elements and the second conductive elements; and forming a second encapsulant on a bottom surface of the first encapsulant for encapsulating the circuit layer and the second conductive elements, thus reducing the fabrication difficulty and increasing the product yield.