Invention Grant
- Patent Title: Polyimide-containing layer and method for etching polyimide-containing layer
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Application No.: US13900324Application Date: 2013-05-22
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Publication No.: US09982108B2Publication Date: 2018-05-29
- Inventor: Chih-Cheng Lin , Chyi-Ming Leu
- Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101125739A 20120718
- Main IPC: C08L79/08
- IPC: C08L79/08 ; C08K3/36 ; C08J7/12 ; C08K3/20 ; C08K3/22 ; H05K1/03
Abstract:
The disclosure provides a polyimide-containing layer suitable for being etched by an alkaline solution and a method for etching a polyimide-containing layer. The polyimide-containing layer suitable for being etched by an alkaline solution includes 20-50 parts by weight of a silica dioxide, and 50-80 parts by weight of a polyimide.
Public/Granted literature
- US20140021169A1 POLYIMIDE-CONTAINING LAYER AND METHOD FOR ETCHING POLYIMIDE-CONTAINING LAYER Public/Granted day:2014-01-23
Information query
