发明授权
- 专利标题: Tunnel field-effect transistor (TFET) based high-density and low-power sequential
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申请号: US14922072申请日: 2015-10-23
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公开(公告)号: US09985611B2公开(公告)日: 2018-05-29
- 发明人: Daniel H. Morris , Uygar E. Avci , Ian A. Young
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Green, Howard & Mughal LLP
- 主分类号: H03K3/356
- IPC分类号: H03K3/356 ; H01L29/66 ; H03K3/012 ; H03K3/3562
摘要:
Described is an apparatus which comprises: a first p-type Tunneling Field-Effect Transistor (TFET); a first n-type TFET coupled in series with the first p-type TFET; a first node coupled to gate terminals of the first p-type and n-type TFETs; a first clock node coupled to a source terminal of the first TFET, the first clock node is to provide a first clock; and a second clock node coupled to a source terminal of the second TFET, the second clock node is to provide a second clock.
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