A method for filling a through hole (TH) located on a substrate is provided. The TH is a continuous channel having an upper rim, a lower rim and an interior surface. In one embodiment, the method comprises steps (a)-(d). In the step (a), a conductive material (CM) is deposited over the substrate to thereby deposit a layer of the CM around the rims and on the interior surface. In the step (b), the deposited CM is etched. In particular, the etching step selectively removes more CM deposited at the rims relative to CM deposited at a mid-section of the interior surface of the channel. In the step (c), the steps (a) and (b) are optionally repeated until the channel is sealed at the mid-section by a bridge formed of CM. In the step (d), the CM is further deposited over the substrate to thereby completely fill the TH.