Invention Grant
- Patent Title: High speed and low power sense amplifier
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Application No.: US15706586Application Date: 2017-09-15
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Publication No.: US09997252B2Publication Date: 2018-06-12
- Inventor: Xiao Yan Pi , Xiaozhou Qian , Kai Man Yue , Yao Zhou , Yaohua Zhu
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Agent Brent Yamashita
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/28 ; G11C16/08 ; G11C7/14 ; G11C16/24 ; G11C7/06 ; G11C29/02 ; G11C7/12 ; G11C29/12 ; G11C29/50
Abstract:
An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.
Public/Granted literature
- US20180005701A1 High Speed And Low Power Sense Amplifier Public/Granted day:2018-01-04
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