Invention Grant
- Patent Title: Through vias and methods of formation thereof
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Application No.: US13776153Application Date: 2013-02-25
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Publication No.: US09997443B2Publication Date: 2018-06-12
- Inventor: Helmut Brech , Albert Birner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/08 ; H01L29/417 ; H01L23/48 ; H01L21/8234 ; H01L27/12 ; H01L23/498 ; H01L21/768
Abstract:
In accordance with an embodiment of the present invention, a semiconductor chip includes a device region disposed in or over a substrate, a doped region disposed in the device region, and a through via disposed in the substrate. The through via extends through the doped region.
Public/Granted literature
- US20140239411A1 Through Vias and Methods of Formation Thereof Public/Granted day:2014-08-28
Information query
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