- 专利标题： Microelectronic device and method of manufacturing same
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申请号： US12590650申请日： 2009-11-12
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公开(公告)号： US09999129B2公开(公告)日： 2018-06-12
- 发明人: John S. Guzek , Mihir K. Roy , Brent M. Roberts
- 申请人： John S. Guzek , Mihir K. Roy , Brent M. Roberts
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Schwabe, Williamson & Wyatt, P.C.
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L23/498 ; H01L23/64 ; H05K1/16 ; H01L23/00 ; H05K1/02 ; H05K1/11
摘要：
A microelectronic device comprises a first substrate (110) having a first electrically conductive path (111) therein and a second substrate (120) above the first substrate and having a second electrically conductive path (121) therein, wherein the first electrically conductive path and the second electrically conductive path are electrically connected to each other and form a portion of a current loop (131) of an inductor (130).
公开/授权文献
- US20110108947A1 Microelectronic device and method of manufacturing same 公开/授权日：2011-05-12
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