再颁专利
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US97770申请日: 1987-09-17
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公开(公告)号: USRE32993E公开(公告)日: 1989-07-18
- 发明人: Kenji Anami , Masahiko Yoshimoto , Hirofumi Shinohara , Osamu Tomisawa
- 申请人: Kenji Anami , Masahiko Yoshimoto , Hirofumi Shinohara , Osamu Tomisawa
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX57-95932 19820602
- 主分类号: G11C11/417
- IPC分类号: G11C11/417 ; G11C5/02 ; G11C5/06 ; G11C8/12 ; G11C8/14 ; G11C11/41
摘要:
A semiconductor memory device is improved as regards current consumption and access time by dividing the memory cells into a plurality of columner groups and providing group selecting lines. Front-end word lines flow resistance are connected to outputs of row decoders, and AND gates receive selecting signals on the group selecting lines and the outputs of the front-end word lines. Word lines of a comparatively short length are connected to the AND outputs.
公开/授权文献
- USD414521S Electronic dart game 公开/授权日:1999-09-28
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