再颁专利
- 专利标题: Semiconductor memory device and read and write methods thereof
- 专利标题(中): 半导体存储器件及其读写方法
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申请号: US09726665申请日: 2000-11-29
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公开(公告)号: USRE37753E1公开(公告)日: 2002-06-18
- 发明人: Kye-Hyun Kyung
- 申请人: Kye-Hyun Kyung
- 优先权: KR95-29574 19950911
- 主分类号: G11C800
- IPC分类号: G11C800
摘要:
A semiconductor memory device includes input/output circuitry capable of operating in sync with an externally provided I/O clock signal. A data in buffer and a data out buffer provide for serial to parallel conversion of write data and, conversely, parallel to serial conversion of read data. The data buffers can be synchronized with the external I/O clock signal thereby decoupling their operation from the internal system clock signal. This strategy improves I/O bandwidth and further provides for matching different numbers of bit lines or word sizes as between the I/O data port and the memory array itself. An internal I/O clock generator can be provided for generating I/O clock signals, again without the limitation of synchronizing to the internal system clock signal.
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