再颁专利
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US10452203申请日： 2003-06-02
-
公开(公告)号： USRE38907E1公开(公告)日： 2005-12-06
- 发明人: Tomoko Matsudai , Tsutomu Kojima , Akio Nakagawa
- 申请人： Tomoko Matsudai , Tsutomu Kojima , Akio Nakagawa
- 申请人地址： JP Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP11-185860 19990630; JP11-185863 19990630
- 主分类号： H03K5/22
- IPC分类号： H03K5/22 ; H03K5/24 ; H03K17/082 ; H03K17/10 ; H03K17/14
摘要：
The differential amplifier of a comparator circuit includes first and second n-type MOSFETs for receiving an input signal, first and second p-type MOSFETs of a current mirror circuit, and a third n-type MOSFET of a current source circuit. The output stage includes a third p-type MOSFET for transmitting a signal, and a fourth n-type MOSFET of the current source circuit. The differential amplifier further includes fifth and sixth n-type MOSFETs respectively series-connected to the first and second n-type MOSFETs. The output stage further includes a seventh n-type MOSFET series-connected to the fourth n-type MOSFET. The gates of the fifth, sixth, and seventh n-type MOSFETs are connected to voltage bias circuits. The fifth, sixth, and seventh n-type MOSFETs suppress variations in voltage at an output node caused by poor saturation characteristics of the first, second, and fourth main n-type MOSFETs.
信息查询
IPC分类:
