- 专利标题: Electron beam exposure system
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申请号: US13343038申请日: 2012-01-04
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公开(公告)号: USRE45049E1公开(公告)日: 2014-07-29
- 发明人: Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
- 申请人: Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
- 申请人地址: NL Delft
- 专利权人: Mapper Lithography IP B.V.
- 当前专利权人: Mapper Lithography IP B.V.
- 当前专利权人地址: NL Delft
- 代理机构: Hoyng Monegier LLP
- 代理商 David P. Owen
- 主分类号: H01J37/30
- IPC分类号: H01J37/30 ; H01J37/304
摘要:
The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
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