Invention Application
WO1994010702A1 PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME
审中-公开
制造层状超导材料和制造包括其的电子器件的方法
- Patent Title: PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME
- Patent Title (中): 制造层状超导材料和制造包括其的电子器件的方法
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Application No.: PCT/US1993010021Application Date: 1993-10-21
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Publication No.: WO1994010702A1Publication Date: 1994-05-11
- Inventor: SYMETRIX CORPORATION , OLYMPUS OPTICAL CO., LTD. , YOSHIMORI, Hiroyuki , WATANABE, Hitoshi , PAZ DE ARAUJO, Carlos, A. , McMILLAN, Larry, D. , CUCHIARO, Joseph, D. , SCOTT, Michael, C.
- Applicant: SYMETRIX CORPORATION , OLYMPUS OPTICAL CO., LTD.
- Assignee: SYMETRIX CORPORATION,OLYMPUS OPTICAL CO., LTD.
- Current Assignee: SYMETRIX CORPORATION,OLYMPUS OPTICAL CO., LTD.
- Priority: US7/965,190 19921023; US7/981,133 19921124; US8/065,656 19930521; US8/065,666 19930521
- Main IPC: H01L21/316
- IPC: H01L21/316
Abstract:
A liquid precursor containing a metal is applied to a substrate (18), RTP baked, and annealed to form a layered superlattice material (30). To obtain good electrical properties, prebaking the substrate (18) in oxygen in the RTP and anneal are essential, except for high bismuth content precursors. Excess bismuth between 110 % and 140 % of stoichiometry and RTP temperature of 750 DEG C is optimum. The film is formed in two layers (30A, 30B), the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor.
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