发明申请
- 专利标题： SILICON ON INSULATOR HIGH-VOLTAGE SWITCH
- 专利标题（英）： Silicon on insulator high-voltage switch
- 专利标题（中）： SOI高压开关
-
申请号： PCT/DE1998/003592申请日： 1998-12-07
-
公开(公告)号： WO99035695A1公开(公告)日： 1999-07-15
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/06 ; H01L29/40 ; H01L29/739 ; H01L29/78 ; H01L29/786 ; H03K17/10
摘要：
The invention relates to a silicon-on-insulator high-voltage switch with a field effect transistor structure. The invention provides for a drift zone (11) of the one conductivity type to be located in the drain area (3, 2) between a gate electrode (6) and a drain electrode (7, D). Column-like grooves (8) having the form of a grid are embedded in said drift zone (11) and filled with semi-conductor material (9, 10) of the other conductivity type.
IPC分类:
