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    NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：WO2023070372A1

    公开(公告)日：2023-05-04

    申请号：PCT/CN2021/126722

    申请日：2021-10-27

    Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

    Inventor： ZHANG, Xin ,  SHENG, Jianjian ,  LV, Junyuan ,  LI, Zhenzhe

    IPC: H01L29/40 ,  H01L29/20 ,  H01L29/778 ,  H01L21/335 ,  H01L27/06

    Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a gate structure, a first field plate, and a second field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate structure is disposed above the second nitride-based semiconductor layer. The first field plate is disposed over the gate structure and is electrically coupled with the source electrode and the drain electrode. The second field plate is disposed over the gate structure and is electrically coupled with the gate structure. The first field plate and the second field plate are parallel with each other. A top surface of the first field plate faces a bottom surface of the second field plate to overlap with each other.

    半導体装置、撮像ユニット、内視鏡、および、半導体装置の製造方法
    3.
    发明申请
    半導体装置、撮像ユニット、内視鏡、および、半導体装置の製造方法 审中-公开

    公开(公告)号：WO2023021670A1

    公开(公告)日：2023-02-23

    申请号：PCT/JP2021/030464

    申请日：2021-08-19

    Applicant: オリンパス株式会社

    Inventor： 小林　慧一

    IPC: H01L27/146 ,  A61B1/05 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522 ,  H01L29/40 ,  H04N5/369

    Abstract: 撮像ユニット１は、第１の主面１０ＳＡと第２の主面１０ＳＢとを有し、第１の主面１０ＳＡに受光回路１１が形成され、第２の主面１０ＳＢに開口を有するビアホールＨ１０の内面に貫通配線５０が配設されている撮像基板１０と、ビアホールＨ１０の周囲の第２の主面１０ＳＢおよびビアホールＨ１０の中の底面から第２の主面１０ＳＢに達しない範囲に配設されている半田レジスト膜６０と、ビアホールＨ１０の中に配設されている半田レジスト膜６０の表面を覆っており、ビアホールＨ１０の開口の外縁において、半田レジスト膜６０に覆われていない貫通配線５０と接合されている半田からなる接合端子７０と、を有する。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：WO2023015494A1

    公开(公告)日：2023-02-16

    申请号：PCT/CN2021/112112

    申请日：2021-08-11

    Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

    Inventor： HE, Chuan ,  PU, Xiaoqing ,  HAO, Ronghui ,  ZHANG, Jinhan ,  WONG, King Yuen

    IPC: H01L29/40 ,  H01L29/778 ,  H01L21/335

    Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, a first and a second field plates, and a first dielectric layer. The first field plate is disposed above the second nitride-based semiconductor layer. The second field plate is discontinuous and disposed above the second nitride-based semiconductor layer and in a position higher than the first field plate. The second field plate includes one or more enclosed discontinuities in a discontinuity region thereof. The first dielectric layer is disposed above the second field plate. The first dielectric layer covers and penetrates the second discontinuous field plate in the discontinuity region such that the second field plate encloses at least one portion of the first dielectric layer within its one or more enclosed discontinuities.

    POWER SEMICONDUCTOR DEVICE
    8.
    发明申请
    POWER SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：WO2022205081A1

    公开(公告)日：2022-10-06

    申请号：PCT/CN2021/084443

    申请日：2021-03-31

    Applicant: DYNEX SEMICONDUCTOR LIMITED ,  ZHUZHOU CRRC TIMES ELECTRIC CO. LTD.

    Inventor： ZHU, Chunlin ,  LIU, Guoyou

    IPC: H01L29/739 ,  H01L21/331 ,  H01L29/06 ,  H01L29/40

    Abstract: There is provided a power semiconductor device 1, comprising: a semiconductor substrate 2 comprising: a base layer 5 selectively provided at a first side of the semiconductor substrate, and wherein the base layer has a first conductivity type; a collector layer 3 provided at a second side of the semiconductor substrate, wherein the second side is opposite to the first side, and wherein the collector layer has the first conductivity type; and a drift layer 4 having a second conductivity type opposite to the first conductivity type, wherein the drift layer is arranged between the collector layer 3 and the base layer 5; an active cell 15 provided in the semiconductor substrate 2, wherein the active cell 15 comprises an emitter region 7 which has the second conductivity type, an active base region 5-i which is a part of the base layer 5, an active gate trench 9 comprising a gate insulator 11 and an active gate electrode 10 disposed therein, and wherein the active gate trench 9 is configured to extend from a surface 16 of the semiconductor substrate 2 at the first side into the drift layer 4 along a first direction Y; and an insulation trench 17 provided in the substrate 2 and neighbouring the active cell 15, wherein the insulation trench 17 is filled with a dielectric material, wherein the active cell 15 has a first length L1 along a second direction X perpendicular to the first direction Y, and the insulation trench 17 has a second length L2 along the second direction X, and the first and second lengths L1 and L2 satisfy the relationship of 0.5 ≤ L2/L1 ≤ 2.

    A FIELD EFFECT TRANSISTOR DEVICE
    9.
    发明申请
    A FIELD EFFECT TRANSISTOR DEVICE 审中-公开

    公开(公告)号：WO2022194368A1

    公开(公告)日：2022-09-22

    申请号：PCT/EP2021/056856

    申请日：2021-03-17

    Applicant: HUAWEI TECHNOLOGIES CO., LTD. ,  MOUHOUBI, Samir

    Inventor： MOUHOUBI, Samir

    IPC: H01L29/778 ,  H01L29/423 ,  H01L29/40 ,  H01L29/10 ,  H01L29/45 ,  H01L29/47 ,  H01L29/20

    Abstract: The present disclosure relates to a FET device (10), comprising a substrate (11), a GaN structure (15) covering a portion of the substrate (11), and a gate metal layer (17) on top of the GaN structure (15). The gate metal layer (17) comprises at least one first section (17-1) being formed from a first material composition, and a second section (17-2) being formed from a second material composition that is different from the first material composition, wherein a first interface (41) between the GaN structure (15) and the at least one first section (17-1) of the gate metal layer (17) has ohmic contact properties, and wherein a second interface (43) between the GaN structure (15) and the second section (17-2) of the gate metal layer (17) has non-ohmic contact properties

    SEMICONDUCTOR DEVICES FOR RADIO RECEIVERS AND TRANSMITTERS
    10.
    发明申请
    SEMICONDUCTOR DEVICES FOR RADIO RECEIVERS AND TRANSMITTERS 审中-公开

    公开(公告)号：WO2022178573A1

    公开(公告)日：2022-09-01

    申请号：PCT/AU2022/050131

    申请日：2022-02-22

    Applicant: MACQUARIE UNIVERSITY

    Inventor： MAHON, Simon

    IPC: H01L29/772 ,  H01L29/40 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H03K17/041 ,  H03K17/0812 ,  H03K17/687 ,  H03K17/16 ,  H04B1/403

    Abstract: A semiconductor transistor device operable as a RF mixer is described. The device includes a field effect transistor with a field plate electrode. The field plate electrode is structured and located to be electromagnetically coupled to the gate electrode of the field effect transistor when carrying a radio frequency oscillation signal, to cause the field effect transistor to produce an output signal that is a mixed signal at the gate and the field plate. A semiconductor device for a radio receiver is also described. The device includes a field effect transistor with a field plate. A transient voltage signal is applied to the field plate responsive to detection of an interfering signal.

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