Invention Application
WO9961686A9 METHOD FOR PRODUCING MONOCRYSTALS OF LANTHANUM AND GALLIUM SILICATE
审中-公开
用于生产硅酸钠和硅酸钠的单晶的方法
- Patent Title: METHOD FOR PRODUCING MONOCRYSTALS OF LANTHANUM AND GALLIUM SILICATE
- Patent Title (中): 用于生产硅酸钠和硅酸钠的单晶的方法
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Application No.: PCT/RU9900168Application Date: 1999-05-21
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Publication No.: WO9961686A9Publication Date: 2000-02-10
- Inventor: ALENKOV VLADIMIR VLADIMIROVICH , BOUZANOV OLEG ALEXEEVICH , GRITSENKO ALEXANDR BORISOVICH
- Applicant: TOVARISCHESTVO S OGRANICHENNOI , ALENKOV VLADIMIR VLADIMIROVICH , BOUZANOV OLEG ALEXEEVICH , GRITSENKO ALEXANDR BORISOVICH
- Assignee: TOVARISCHESTVO S OGRANICHENNOI,ALENKOV VLADIMIR VLADIMIROVICH,BOUZANOV OLEG ALEXEEVICH,GRITSENKO ALEXANDR BORISOVICH
- Current Assignee: TOVARISCHESTVO S OGRANICHENNOI,ALENKOV VLADIMIR VLADIMIROVICH,BOUZANOV OLEG ALEXEEVICH,GRITSENKO ALEXANDR BORISOVICH
- Priority: RU98109547 1998-05-22; RU98113240 1998-07-02
- Main IPC: C30B15/00
- IPC: C30B15/00 ; C30B29/34
Abstract:
The present invention pertains to the chemical techniques used in the field of oxide-based composite materials for growing piezo-electric monocrystals that essentially consist of lanthanum and gallium silicate La3Ga5SiO14. The lanthanum and gallium silicate crystals are grown according to the Chokhralskiy method on a seed crystal having an orientation of , , and . The melt mixture is obtained in two steps according to a method of high-temperature self-propagating synthesis.
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