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Invention Application
WO01073839A1 METHOD FOR PRODUCING ELECTRIC CONNECTIONS BETWEEN INDIVIDUAL CIRCUIT ELEMENTS 审中-公开
过程产生各电路元件之间的电气连接

  • Patent Title: METHOD FOR PRODUCING ELECTRIC CONNECTIONS BETWEEN INDIVIDUAL CIRCUIT ELEMENTS
  • Patent Title (English): Method for producing electric connections between individual circuit elements
  • Patent Title (中): 过程产生各电路元件之间的电气连接
  • Application No.: PCT/DE2001/001080
    Application Date: 2001-03-19
  • Publication No.: WO01073839A1
    Publication Date: 2001-10-04
  • Main IPC: H01L21/28
  • IPC: H01L21/28 ;  H01L21/225 ;  H01L21/336 ;  H01L29/417 ;  H01L29/78
METHOD FOR PRODUCING ELECTRIC CONNECTIONS BETWEEN INDIVIDUAL CIRCUIT ELEMENTS
Abstract:
The invention relates to a method for producing an integrated component which has several electrode connections (21,22, 23, 26) which protrude in relation to the main surface thereof (11) on a semiconductor substrate (1). The electrode connections (21,22, 23, 26) are formed by removing the electrode connection layer (2) and/or the insulation covering layer (3a) to areas (3a1,3a2) which are adjacent to the electrode connections (21,22, 23, 26). The invention also relates to a method for producing electric connections (24, 25, 101 -106) between individual circuit elements (21, 22, 23, 26, LDD1, LDD2, HDD1 -HDD3) formed in or on a semiconductor substrate (1). The channels of the strip conductors incorporated into the planarized surface (111,112) are composed of circuit elements (LLD1, LDD2, HDD1 - HDD3, 21, 22, 23, 26) and filling material (70 - 75) and are filled with a good conductive material (10, 101 - 106) . The invention also relates to a semiconductor component provided with several protruding electrode connections.
Abstract(Chinese):

本发明涉及一种方法，用于在半导体衬底上制造（1）形成包括多个集成器件与衬底相反aufgragend形成有电极端子（21，22，23，26）的主表面（11），其中，所述电极端子（21，22， 23，26）在同一时间（通过去除电极连接层2）和/或所述绝缘层（3a）中的电极（端子21，22，23，26相邻的）区域（3A1，3A2）形成。 此外，本发明涉及用于生产电连接的个体之间的过程（24，25，101〜106）上或在半导体衬底（1）形成的电路元件（21，22，23，26，LDD1，LDD2，HDD1到 HDD3），所述电路元件（LLD1，LDD2，HDD1到HDD3，21，22，23，26）和填充材料（70〜75）的平坦表面（111，112）的导体轨道的通道中产生的，并且具有良好的导体路径信道 导电材料（10，101〜106）被填充。 此外，本发明涉及具有多个形成参天电极端子的半导体装置。

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