Invention Application
WO2006053213A1 METHODS AND ARTICLES INCORPORATING LOCAL STRESS FOR PERFORMANCE IMPROVEMENT OF STRAINED SEMICONDUCTOR DEVICES
审中-公开
包含应变半导体器件性能改进的局部应力的方法和文章
- Patent Title: METHODS AND ARTICLES INCORPORATING LOCAL STRESS FOR PERFORMANCE IMPROVEMENT OF STRAINED SEMICONDUCTOR DEVICES
- Patent Title (中): 包含应变半导体器件性能改进的局部应力的方法和文章
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Application No.: PCT/US2005/040917Application Date: 2005-11-09
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Publication No.: WO2006053213A1Publication Date: 2006-05-18
- Inventor: NISHIDA, Toshikazu , THOMPSON, Scott, E. , OGDEN, Al , WU, Kehuey
- Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. , NISHIDA, Toshikazu , THOMPSON, Scott, E. , OGDEN, Al , WU, Kehuey
- Applicant Address: 223 Grinter Hall, Gainesville, FL 32611 US
- Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.,NISHIDA, Toshikazu,THOMPSON, Scott, E.,OGDEN, Al,WU, Kehuey
- Current Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.,NISHIDA, Toshikazu,THOMPSON, Scott, E.,OGDEN, Al,WU, Kehuey
- Current Assignee Address: 223 Grinter Hall, Gainesville, FL 32611 US
- Agency: JETTER, Neil, R.
- Priority: US60/626,226 20041109
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L29/84 ; H01L23/051
Abstract:
A packaged semiconductor device (450) includes a semiconductor chip (400) having at least one selectively thinned substrate (cavity) region (410). A package (460) is provided for mounting, enclosing and electrically connecting the chip (400) to the outside world, and structure for applying external stress (470) to induce strain in the thinned substrate region (410). The external stress is preferably adjustable, such as by varying the gas flow (or a vacuum) applied through a pressure valve.
Information query
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