HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME

Invention Application

WO2006124174A3 HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME 审中-公开

Title translation: 具有双向阻塞能力的高电压碳化硅MOS双极器件及其制造方法

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Patent Title: HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME
Patent Title (中): 具有双向阻塞能力的高电压碳化硅MOS双极器件及其制造方法
Application No.: PCT/US2006014376

Application Date: 2006-04-18
Publication No.: WO2006124174A3

Publication Date: 2007-04-05
Inventor: RYU SEI-HYUNG , JENNY JASON R , DAS MRINAL K , HOBGOOD HUDSON MCDONALD , AGARWAL ANANT K , PALMOUR JOHN W
Applicant: CREE INC , RYU SEI-HYUNG , JENNY JASON R , DAS MRINAL K , HOBGOOD HUDSON MCDONALD , AGARWAL ANANT K , PALMOUR JOHN W
Assignee: CREE INC,RYU SEI-HYUNG,JENNY JASON R,DAS MRINAL K,HOBGOOD HUDSON MCDONALD,AGARWAL ANANT K,PALMOUR JOHN W
Current Assignee: CREE INC,RYU SEI-HYUNG,JENNY JASON R,DAS MRINAL K,HOBGOOD HUDSON MCDONALD,AGARWAL ANANT K,PALMOUR JOHN W
Priority: US13235505 2005-05-18
Main IPC: H01L29/739
IPC: H01L29/739 ; H01L21/04 ; H01L29/06 ; H01L29/24

HIGH VOLTAGE SILICON CARBIDE MOS-BIPOLAR DEVICES HAVING BI-DIRECTIONAL BLOCKING CAPABILITIES AND METHODS OF FABRICATING THE SAME

Abstract:

Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.

Abstract(Chinese):

提供了碳化硅高压半导体器件及其制造方法。这些器件包括电压阻挡衬底。提供具有电压阻挡衬底的绝缘栅双极晶体管。可以提供平面和斜边缘终止。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的
H01L29/739	.....受场效应控制的