公开(公告)号：WO2022150264A1

公开(公告)日：2022-07-14

申请号：PCT/US2022/011023

申请日：2022-01-03

Applicant: CREE, INC.

Inventor： BOTHE, Kyle ,  GUO, Jia ,  FISHER, Jeremy ,  SHEPPARD, Scott

IPC: H01L29/778 ,  H01L29/08 ,  H01L29/20 ,  H01L29/40 ,  H01L29/417

Abstract: A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure (150) comprising a barrier layer (156) on a channel layer (154), first and second source/drain regions (164, 166) in the semiconductor layer structure, first and second source/ drain contacts (124, 126) on the respective first and second source/ drain regions, and a longitudinally-extending gate finger (122) that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/ drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/ drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.

公开(公告)号：WO2021262920A2

公开(公告)日：2021-12-30

申请号：PCT/US2021/038799

申请日：2021-06-24

Applicant: CREE, INC.

Inventor： LIM, Kwangmo Chris ,  NOORI, Basim ,  MU, Qianli ,  MARBELL, Marvin ,  SHEPPARD, Scott ,  KOMPOSCH, Alexander

IPC: H01L23/66 ,  H01L23/482 ,  H03F3/19 ,  H05K1/02 ,  H01L23/498 ,  H01L23/538 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H03F3/72 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2223/6688 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17107 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32227 ,  H01L2224/32235 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83805 ,  H01L2224/92125 ,  H01L23/047 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/49531 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7786 ,  H01L2924/1421 ,  H01L2924/161 ,  H01L2924/171 ,  H01L2924/181 ,  H01L2924/19107 ,  H03F1/0288 ,  H03F1/526 ,  H03F2200/451 ,  H03F3/195 ,  H03F3/211 ,  H05K1/0243 ,  H05K1/113 ,  H05K2201/09627 ,  H05K2201/09636 ,  H05K2201/10545 ,  H05K3/3415 ,  H05K3/3442

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：WO2021247276A2

公开(公告)日：2021-12-09

申请号：PCT/US2021/033981

申请日：2021-05-25

Applicant: CREE, INC.

Inventor： ALCORN, Terry ,  NAMISHIA, Daniel ,  RADULESCU, Fabian

IPC: H03F3/195 ,  H01L23/66 ,  H01L25/16 ,  H01L29/66 ,  H01L21/70 ,  H01L23/495 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/8258 ,  H01L2223/6655 ,  H01L2224/0401 ,  H01L2224/05025 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48157 ,  H01L2224/48177 ,  H01L2224/48247 ,  H01L2224/73257 ,  H01L2224/94 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/49531 ,  H01L23/498 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0694 ,  H01L2924/10156 ,  H01L2924/1421 ,  H01L2924/19107

Abstract: An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

公开(公告)号：WO2021167822A1

公开(公告)日：2021-08-26

申请号：PCT/US2021/017393

申请日：2021-02-10

Applicant: CREE, INC.

Inventor： KOMPOSCH, Alexander ,  WARD, Simon ,  CHIDURALA, Madhu

IPC: H01L23/498 ,  H01L21/58 ,  H01L23/02 ,  H01L23/538 ,  H01L27/15 ,  H01L33/62

Abstract: A device includes: a surface mount device carrier configured to be mounted to a metal submount of a transistor package, said surface mount device carrier includes an insulating substrate includes a top surface and a bottom surface and a first pad and a second pad arranged on a top surface of said surface mount device carrier; at least one surface mount device includes a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said insulating substrate, where at least one of the first pad and the second pad are configured as wire bond pads.

公开(公告)号：WO2021146229A1

公开(公告)日：2021-07-22

申请号：PCT/US2021/013160

申请日：2021-01-13

Applicant: CREE, INC.

Inventor： JONES, Evan ,  FISHER, Jeremy

IPC: H01L21/8252 ,  H01L27/06 ,  H01L27/07 ,  H01L49/02 ,  H01L29/20 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0733 ,  H01L28/40 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/452 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/92

Abstract: A High Mobility Electron Transistor, HEMT, (10) and a capacitor (14, 18, 20, 22, 24) co-formed on an integrated circuit share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT (10), which also functions in lieu of a base metal layer of a conventional capacitor (12). In another embodiment, a dialectic layer of the capacitor (14, 18, 20, 22, 24) may be formed in a passivation step of forming the HEMT (10). In another embodiment, a metal contact of the HEMT (10) (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor (22). In these embodiments, one or more processing steps required to form a conventional capacitor (12) are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT (10).

公开(公告)号：WO2021113076A1

公开(公告)日：2021-06-10

申请号：PCT/US2020/060959

申请日：2020-11-18

Applicant: CREE, INC.

Inventor： LEE, Kyoung-Keun

IPC: H01L23/31 ,  H01L23/48

Abstract: A process of forming a device with a pad structure having environmental protection includes providing a semiconductor body portion, arranging a pad on the semiconductor body portion, providing at least one environment encapsulation portion at least partially on the pad, arranging a supplemental pad on the pad, and arranging the supplemental pad to include side surfaces that extend vertically above the at least one environment encapsulation portion. A device having a pad structure having environmental protection is also disclosed.

公开(公告)号：WO2021102119A1

公开(公告)日：2021-05-27

申请号：PCT/US2020/061249

申请日：2020-11-19

Applicant: CREE, INC.

Inventor： SUICH, David ,  STASIW, Daniel, E. ,  HARRELL, JR., Samuel, Richard

IPC: H01L33/64 ,  H01L33/60

Abstract: Submount structures for light-emitting diode (LED) packages are provided. Submounts may include a base material that is configured to provide high thermal conductivity and a ceramic layer on the base material that is configured to provide high reflectivity for one or more LED chips that are mounted thereon. In certain aspects, the base material may include a ceramic base having a ceramic material that is different than a material of the ceramic layer. In certain aspects, submounts may also include additional ceramic layers configured to provide high reflectivity. In certain aspects, LED packages include electrical traces that are arranged either on one or more ceramic layers or at least partially embedded within one or more ceramic layers. The arrangement of such ceramic layers may provide increased reflectivity in areas where it may be difficult for other reflective materials to be present, such as gaps formed between tightly spaced electrical traces.

公开(公告)号：WO2021101866A1

公开(公告)日：2021-05-27

申请号：PCT/US2020/060847

申请日：2020-11-17

Applicant: CREE, INC.

Inventor： LEE, Kyoung-Keun

IPC: H01L21/768 ,  H01L23/48 ,  H01L23/498

Abstract: A device including a substrate, a passivation layer, a source, a gate, a drain, and the gate including at least one step portion. Where the at least one step portion is arranged within the passivation layer, the at least one step portion includes at least one first surface and at least one second surface, where the at least one first surface is connected to the at least one second surface, where the gate includes a third surface, and where the at least one step portion is connected to the third surface. A process is also disclosed.

公开(公告)号：WO2021071758A1

公开(公告)日：2021-04-15

申请号：PCT/US2020/054115

申请日：2020-10-02

Applicant: CREE, INC.

Inventor： RYU, Sei-Hyung

IPC: H01L29/08 ,  H01L29/10 ,  H01L29/78

Abstract: A semiconductor device (10) includes a substrate (12), a drift layer (14), a well region (16), and a source region (18). The substrate (12) has a first conductivity type. The drift layer (14) has the first conductivity type and is on the substrate (12). The well region (16) has a second conductivity type opposite the first conductivity type and provides a channel region (28). The source region (18) is in the well region (16) and has the first conductivity type. A doping concentration of the well region (16) along a surface of the drift layer (14) opposite the substrate (12) is variable such that the well region (16) includes a region of increased doping concentration (30) at a distance from a junction between the source region (18) and the well region (16).

公开(公告)号：WO2020263748A1

公开(公告)日：2020-12-30

申请号：PCT/US2020/038960

申请日：2020-06-22

Applicant: CREE, INC.

Inventor： ANDREWS, Peter, Scott ,  BLAKELY, Colin ,  REIHERZER, Jesse ,  PUN, Arthur, F.

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/60 ,  H01L33/50 ,  H01L33/58 ,  H01L33/54 ,  H01L33/62 ,  H01L33/08

Abstract: Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. LED packages are disclosed that include an LED chip with multiple discrete active layer portions mounted on a submount. The LED packages may further include wavelength conversion elements and light-altering materials. The multiple discrete active layer portions may be electrically connected in series, parallel, or in individually addressable arrangements. The LED chip with the multiple discrete active layer portions may provide the LED package with improved brightness, improved alignment, simplified manufacturing, and reduced costs.