Invention Application
- Patent Title: COPPER DEPOSITION FOR FILLING FEATURES IN MANUFACTURE OF MICROELECTRONIC DEVICES
- Patent Title (中): 填充微电子器件制造特点的铜沉积
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Application No.: PCT/US2007081671Application Date: 2007-10-17
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Publication No.: WO2008049019A3Publication Date: 2008-07-03
- Inventor: LIN XUAN , HURTUBISE RICHARD , PANECCASIO VINCENT , CHEN QINGYUN
- Applicant: ENTHONE , LIN XUAN , HURTUBISE RICHARD , PANECCASIO VINCENT , CHEN QINGYUN
- Assignee: ENTHONE,LIN XUAN,HURTUBISE RICHARD,PANECCASIO VINCENT,CHEN QINGYUN
- Current Assignee: ENTHONE,LIN XUAN,HURTUBISE RICHARD,PANECCASIO VINCENT,CHEN QINGYUN
- Priority: US82979706 2006-10-17; US88723307 2007-01-30
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for plating copper onto a semiconductor integrated circuit device substrate by forming an initial metal deposit in the feature which has a profile comprising metal on the bottom of the feature and a segment of the sidewalls having essentially no metal thereon, electrolessly depositing copper onto the initial metal deposit to fill the feature with copper. A method for plating copper onto a semiconductor integrated circuit device substrate by forming a deposit comprising a copper wettable metal in the feature, forming a copper-based deposit on the top-field surface, and depositing copper onto the deposit comprising the copper wettable metal to fill the feature with copper.
Information query
IPC分类:
