公开(公告)号：WO2006135752A2

公开(公告)日：2006-12-21

申请号：PCT/US2006/022493

申请日：2006-06-09

Applicant: ENTHONE INC. ,  PANECCASIO, Vincent, Jr. ,  CHEN, Qingyun ,  VALVERDE, Charles ,  PETROV, Nicolai ,  WITT, Christian ,  HURTUBISE, Richard

Inventor： PANECCASIO, Vincent, Jr. ,  CHEN, Qingyun ,  VALVERDE, Charles ,  PETROV, Nicolai ,  WITT, Christian ,  HURTUBISE, Richard

CPC classification number: C23C18/34 ,  C23C18/50

Abstract: An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Abstract translation: 一种用于在制造包含Co离子源的微电子器件的金属基底上沉积Co或Co合金的化学镀方法和组合物，用于减少沉积到衬底上的金属离子的还原剂和基于肟的 复合稳定剂。

公开(公告)号：WO2007035731A3

公开(公告)日：2007-03-29

申请号：PCT/US2006/036479

申请日：2006-09-19

Applicant: ENTHONE INC. ,  CHEN, Qingyun ,  VALVERDE, Charles ,  PANECCASIO, Vincent ,  PETROV, Nicolai ,  STRITCH, Daniel ,  WITT, Christian ,  HURTUBISE, Richard

Inventor： CHEN, Qingyun ,  VALVERDE, Charles ,  PANECCASIO, Vincent ,  PETROV, Nicolai ,  STRITCH, Daniel ,  WITT, Christian ,  HURTUBISE, Richard

IPC: H01L21/3205

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

公开(公告)号：WO2007035731A2

公开(公告)日：2007-03-29

申请号：PCT/US2006036479

申请日：2006-09-19

Applicant: ENTHONE ,  CHEN QINGYUN ,  VALVERDE CHARLES ,  PANECCASIO VINCENT ,  PETROV NICOLAI ,  STRITCH DANIEL ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

Inventor： CHEN QINGYUN ,  VALVERDE CHARLES ,  PANECCASIO VINCENT ,  PETROV NICOLAI ,  STRITCH DANIEL ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

IPC: H01L21/44

CPC classification number: H01L21/288 ,  C23C18/32 ,  C23C18/34 ,  C23C18/50 ,  H01L21/76849

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract translation: 在制造微电子器件时，将Co，Ni或其合金无电沉积到衬底上的方法和组合物。 颗粒精炼机，整平剂，除氧剂和用于无电Co和Ni沉积溶液的稳定剂。

公开(公告)号：WO2010062822A3

公开(公告)日：2011-08-11

申请号：PCT/US2009065053

申请日：2009-11-19

Applicant: ENTHONE ,  PANECCASIO VINCENT ,  LIN XUAN ,  HURTUBISE RICHARD ,  CHEN QINGYUN

Inventor： PANECCASIO VINCENT ,  LIN XUAN ,  HURTUBISE RICHARD ,  CHEN QINGYUN

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/288

CPC classification number: H01L21/76879 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature.

Abstract translation: 一种用于金属化半导体集成电路器件衬底中的通孔特征的方法，其中所述半导体集成电路器件衬底包括前表面，后表面和所述通孔特征，并且其中所述通孔特征包括在所述衬底的前表面中的开口 ，从基板的前表面向内延伸的侧壁和底部。 该方法包括使半导体集成电路器件衬底与包含（a）铜离子源和（b）整平剂化合物的电解铜沉积化学物质接触，其中矫光剂化合物是二吡啶基化合物和烷基化剂的反应产物; 并向电解沉积化学物质提供电流以将铜金属沉积到通孔特征的底部和侧壁上，从而产生铜填充的通孔特征。

公开(公告)号：WO2008128102A1

公开(公告)日：2008-10-23

申请号：PCT/US2008/060111

申请日：2008-04-11

Applicant: ENTHONE INC. ,  PETROV, Nicolai ,  VALVERDE, Charles ,  CHEN, Qingyun ,  HURTUBISE, Richard

Inventor： PETROV, Nicolai ,  VALVERDE, Charles ,  CHEN, Qingyun ,  HURTUBISE, Richard

IPC: C25D3/12 ,  C23C18/38

CPC classification number: C23C18/34 ,  H01L21/288 ,  H01L21/76849

Abstract: A method and composition for electrolessly depositing a layer of a metal alloy onto a surface of a metal substrate in manufacture of microelectronic devices. The composition comprises a source of metal deposition ions, a borane-based reducing agent, and a two-component stabilizer, wherein the first stabilizer component is a source of hypophosphite and the second stabilizer component is a molybdenum(VI) compound.

Abstract translation: 一种用于在制造微电子器件时将金属合金层无电沉积到金属基板的表面上的方法和组合物。 所述组合物包含金属沉积离子源，基于硼烷的还原剂和双组分稳定剂，其中所述第一稳定剂组分为次磷酸盐，所述第二稳定剂组分为钼（VI）化合物。

公开(公告)号：WO2006135752B1

公开(公告)日：2007-07-12

申请号：PCT/US2006022493

申请日：2006-06-09

Applicant: ENTHONE ,  PANECCASIO VINCENT JR ,  CHEN QINGYUN ,  VALVERDE CHARLES ,  PETROV NICOLAI ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

Inventor： PANECCASIO VINCENT JR ,  CHEN QINGYUN ,  VALVERDE CHARLES ,  PETROV NICOLAI ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

IPC: C23C18/50

CPC classification number: C23C18/34 ,  C23C18/50

Abstract: An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Abstract translation: 一种用于在制造包含Co离子源的微电子器件的金属基底上沉积Co或Co合金的化学镀方法和组合物，用于减少沉积到衬底上的金属离子的还原剂和基于肟的 复合稳定剂。

公开(公告)号：WO2010062822A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/065053

申请日：2009-11-19

Applicant: ENTHONE INC. ,  PANECCASIO, Vincent ,  LIN, Xuan ,  HURTUBISE, Richard ,  CHEN, Qingyun

Inventor： PANECCASIO, Vincent ,  LIN, Xuan ,  HURTUBISE, Richard ,  CHEN, Qingyun

IPC: C25D3/38 ,  C25D7/12 ,  H01L21/288

CPC classification number: H01L21/76879 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for metallizing a via feature in a semiconductor integrated circuit device substrate, wherein the semiconductor integrated circuit device substrate comprises a front surface, a back surface, and the via feature and wherein the via feature comprises an opening in the front surface of the substrate, a sidewall extending from the front surface of the substrate inward, and a bottom. The method comprises contacting the semiconductor integrated circuit device substrate with an electrolytic copper deposition chemistry comprising (a) a source of copper ions and (b) a leveler compound, wherein the leveler compound is a reaction product of a dipyridyl compound and an alkylating agent; and supplying electrical current to the electrolytic deposition chemistry to deposit copper metal onto the bottom and sidewall of the via feature, thereby yielding a copper filled via feature.

Abstract translation: 一种用于金属化半导体集成电路器件基板中的通孔特征的方法，其中所述半导体集成电路器件基板包括前表面，后表面和通孔特征，并且其中所述通孔特征包括在所述基板的前表面中的开口 ，从基板的前表面向内延伸的侧壁和底部。 该方法包括使半导体集成电路器件衬底与包含（a）铜离子源和（b）矫光剂化合物的电解铜沉积化学物质接触，其中矫光剂化合物是二吡啶基化合物和烷化剂的反应产物; 并向电解沉积化学物质提供电流以将铜金属沉积到通孔特征的底部和侧壁上，从而产生铜填充的通孔特征。

公开(公告)号：WO2008049019A2

公开(公告)日：2008-04-24

申请号：PCT/US2007/081671

申请日：2007-10-17

Applicant: ENTHONE INC. ,  LIN, Xuan ,  HURTUBISE, Richard ,  PANECCASIO, Vincent ,  CHEN, Qingyun

Inventor： LIN, Xuan ,  HURTUBISE, Richard ,  PANECCASIO, Vincent ,  CHEN, Qingyun

IPC: H01L21/44

CPC classification number: H01L21/288 ,  C23C18/1608 ,  C23C18/1653 ,  C23C18/1879 ,  C23C18/1896 ,  C23C18/40 ,  C23C18/405 ,  C25D5/02 ,  C25D5/48 ,  C25D5/54 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879

Abstract: A method for plating copper onto a semiconductor integrated circuit device substrate by forming an initial metal deposit in the feature which has a profile comprising metal on the bottom of the feature and a segment of the sidewalls having essentially no metal thereon, electrolessly depositing copper onto the initial metal deposit to fill the feature with copper. A method for plating copper onto a semiconductor integrated circuit device substrate by forming a deposit comprising a copper wettable metal in the feature, forming a copper-based deposit on the top-field surface, and depositing copper onto the deposit comprising the copper wettable metal to fill the feature with copper.

Abstract translation: 通过在所述特征中形成初始金属沉积物来将铜电镀到半导体集成电路器件衬底上的方法，所述特征在所述特征的底部具有包括金属的轮廓，并且所述侧壁的一部分基本上不具有 金属，将铜无电沉积到初始金属沉积物上以用铜填充该特征。 一种通过在特征中形成包括铜可湿润金属的沉积物，在顶部表面上形成铜基沉积物，并且将铜沉积到包含铜可湿润金属的沉积物上来将铜电镀到半导体集成电路装置基底上的方法， 用铜填充此功能。

公开(公告)号：WO2006135752A3

公开(公告)日：2007-04-19

申请号：PCT/US2006022493

申请日：2006-06-09

Applicant: ENTHONE ,  PANECCASIO VINCENT JR ,  CHEN QINGYUN ,  VALVERDE CHARLES ,  PETROV NICOLAI ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

Inventor： PANECCASIO VINCENT JR ,  CHEN QINGYUN ,  VALVERDE CHARLES ,  PETROV NICOLAI ,  WITT CHRISTIAN ,  HURTUBISE RICHARD

IPC: C23C18/50

CPC classification number: C23C18/34 ,  C23C18/50

Abstract: An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Abstract translation: 一种用于在制造微电子器件时将Co或Co合金沉积到金属基衬底上的化学镀方法和组合物，其包括Co离子源，用于减少在衬底上沉积离子到金属的还原剂和基于肟的 复合稳定剂。

公开(公告)号：WO2006091486A3

公开(公告)日：2006-08-31

申请号：PCT/US2006/005659

申请日：2006-02-17

Applicant: ENTHONE INC. ,  CHEN, Qingyun ,  HURTUBISE, Richard ,  WITT, Christian ,  ABYS, Joseph, A. ,  STRITCH, Daniel ,  VALVERDE, Charles

Inventor： CHEN, Qingyun ,  HURTUBISE, Richard ,  WITT, Christian ,  ABYS, Joseph, A. ,  STRITCH, Daniel ,  VALVERDE, Charles

IPC: B05D1/18

Abstract: A method for electrolessly filling a stacked memory cell interconnect feature comprising electroless deposition from a composition comprising Co ions and a reducing agent by bottom-up filling initiated by reduction to Co metal on an electrically conducting bottom of the feature. An electroless deposition composition for electrolessly depositing Co in a high aspect ratio stacked memory cell interconnect feature, the composition comprising water, Co ions, a complexing agent, a buffering agent, a borane-based reducing agent component, and a hypophosphite reducing agent component. There is a concentration ratio of borane-based reducing agent to hypophosphite reducing agent of less than about 0.5.