Invention Application
WO2008115213A3 WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED ULTILIZING METHOD
审中-公开
水平磷光体涂层方法和装置织造的最终方法
- Patent Title: WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED ULTILIZING METHOD
- Patent Title (中): 水平磷光体涂层方法和装置织造的最终方法
-
Application No.: PCT/US2007024367Application Date: 2007-11-20
-
Publication No.: WO2008115213A3Publication Date: 2008-12-18
- Inventor: CHITNIS ASHAY , IBBETSON JAMES , CHAKRABORTY ARPAN , TARSA ERIC J , KELLER BERND , SERUTO JAMES , FU YANKUN
- Applicant: CREE INC , CHITNIS ASHAY , IBBETSON JAMES , CHAKRABORTY ARPAN , TARSA ERIC J , KELLER BERND , SERUTO JAMES , FU YANKUN
- Assignee: CREE INC,CHITNIS ASHAY,IBBETSON JAMES,CHAKRABORTY ARPAN,TARSA ERIC J,KELLER BERND,SERUTO JAMES,FU YANKUN
- Current Assignee: CREE INC,CHITNIS ASHAY,IBBETSON JAMES,CHAKRABORTY ARPAN,TARSA ERIC J,KELLER BERND,SERUTO JAMES,FU YANKUN
- Priority: US65675907 2007-01-22
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/44 ; H01L33/50 ; H01L33/62
Abstract:
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
Public/Granted literature
- WO2008115213A8 WAFER LEVEL PHOSPHOR COATING METHOD AND DEVICES FABRICATED UTILIZING METHOD Public/Granted day:2009-04-30
Information query
IPC分类: