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公开(公告)号：WO2023081048A1
公开(公告)日：2023-05-11
申请号：PCT/US2022/047849
申请日：2022-10-26
Applicant: LUMILEDS LLC
Inventor： LOPEZ, Toni , YOUNG, Erik William , PATHAK, Rajiv
Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.
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公开(公告)号：WO2023076349A1
公开(公告)日：2023-05-04
申请号：PCT/US2022/047842
申请日：2022-10-26
Applicant: LUMILEDS LLC
IPC: H01L33/44
Abstract: A polymer dispersion layer is formed on a substrate or semiconductor light-emitting devices on the substrate. After forming the polymer dispersion layer, drying and curing the polymer dispersion layer forms a cured polymer layer. After curing and drying, with the cured polymer layer being present on only selected, masked areas of the substrate or light-emitting devices, and with other areas of the substrate or light-emitting devices lacking the cured polymer layer and remaining exposed, a material layer is formed on at least the exposed areas of the substrate or light-emitting devices. After forming the material layer, the cured polymer layer is removed from the masked areas, leaving the material layer on the exposed areas.
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3.发明申请
公开(公告)号：WO2023041266A1
公开(公告)日：2023-03-23
申请号：PCT/EP2022/072588
申请日：2022-08-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WIESMANN, Christopher , WANKERL, Heribert , KREINER, Laura , BUTENDEICH, Rainer , SOBCZYK, Sandra
IPC: H01L33/44 , H01L33/50 , H01L33/46 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2933/0025 , H01L2933/0041 , H01L33/504
Abstract: Es wird ein strahlungsemittierendes Halbleiterbauteil (1) angegeben mit - einem strahlungsemittierenden Halbleiterchip (2), der dazu ausgebildet ist, elektromagnetische Strahlung mit einer ersten Peakwellenlänge (P1) auszusenden, - einem Konversionselement (3), das dazu ausgebildet ist, elektromagnetische Strahlung mit einer zweiten Peakwellenlänge (P2) auszusenden, und - einem dielektrischen Schichtenstapel (4), der auf dem strahlungsemittierenden Halbleiterchip (2) und dem Konversionselement (3) angeordnet ist, wobei - ein Transmissionsgrad des dielektrischen Schichtenstapels (4) für Strahlung mit der ersten Peakwellenlänge (P1) und für Strahlung mit der zweiten Peakwellenlänge (P2) in einem ersten Winkelbereich größer als ein Schwellenwert (TS) ist, - der Transmissionsgrad des dielektrischen Schichtenstapels (4) für Strahlung mit der ersten Peakwellenlänge (P1) und für Strahlung mit der zweiten Peakwellenlänge (P2) in einem zweiten Winkelbereich kleiner als der Schwellenwert (TS) ist. Des Weiteren werden ein Verfahren zur Auswahl eines dielektrischen Schichtenstapels und ein Verfahren zur Auswahl eines Konversionsmaterials eines Konversionselements für ein strahlungsemittierendes Halbleiterbauteil angegeben.
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公开(公告)号：WO2023038832A1
公开(公告)日：2023-03-16
申请号：PCT/US2022/042127
申请日：2022-08-31
Applicant: LUMILEDS LLC
Inventor： WILDESON, Isaac , LOTFI, Hossein , BONNE, Ronald , LOPEZ, Toni
Abstract: A light emitting diode (LED) device comprises a plurality of pixels on a backplane, each pixel comprising: semiconductor layers, which include an N-type layer, an active region, and a P-type layer; a cathode electrically contacting the N-type layer; an anode comprising anode segments electrically contacting respective portions of the P-type layer; one or more dielectric materials insulating: the active region and the P-type layer from the cathode, the anode segments from each other, and the anode segments from the cathode; and a plurality of interconnects, each respective interconnect affixing a respective anode segment to the backplane. Methods of making and use the devices are also provided.
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5.发明申请
公开(公告)号：WO2023034545A1
公开(公告)日：2023-03-09
申请号：PCT/US2022/042413
申请日：2022-09-02
Applicant: LUMILEDS LLC
Inventor： ZHANG, Wali , CEN, Zhan Hong , NG, Wee-Hong , TEO, Yeow Meng
Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.
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Patent Agency Ranking
公开(公告)号：WO2023033297A1
公开(公告)日：2023-03-09
申请号：PCT/KR2022/005785
申请日：2022-04-22
Applicant: 삼성디스플레이 주식회사
Abstract: 본 발명의 일 실시예에 의한 발광 소자는, 제1 반도체층; 상기 제1 반도체층 상에 배치된 발광층; 상기 발광층 상에 배치된 제2 반도체층; 상기 제2 반도체층 상에 배치된 전극층; 및 상기 제1 반도체층, 상기 발광층 및 상기 제2 반도체층의 측면을 감싸며, 상기 전극층이 배치된 발광 소자의 일 단부에서 상기 전극층의 일 부분을 감싸는 절연 피막을 포함할 수 있다. 상기 전극층은, 상기 제2 반도체층에 인접한 제1 면; 상기 제1 면과 대향하며, 상기 제1 면의 폭보다 작은 폭을 가지는 제2 면; 및 상기 제1 면과 상기 제2 면을 연결하며, 상기 제1 면에 대하여 75° 내지 90° 범위의 각도에 대응하는 경사를 가지는 측면을 포함할 수 있다.
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公开(公告)号：WO2023010292A1
公开(公告)日：2023-02-09
申请号：PCT/CN2021/110394
申请日：2021-08-03
Applicant: 重庆康佳光电技术研究院有限公司
Abstract: 本发明涉及一种发光器件及其制作方法，该发光器件包括衬底（20、30）、外延结构和保护层（25、35），外延结构形成在衬底（20、30）上，保护层（25、35）覆盖外延结构，并在外延结构的四周侧面处与衬底（20、30）连接，在与衬底（20、30）连接的位置，外延结构的至少一个侧面和保护层（25、35）之间具有一孔洞（203、303）。
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公开(公告)号：WO2023008829A1
公开(公告)日：2023-02-02
申请号：PCT/KR2022/010714
申请日：2022-07-21
Applicant: 삼성디스플레이 주식회사
Inventor： 김현향
Abstract: 표시 장치는 발광 소자들이 배치된 화소들; 상기 화소들의 상기 발광 소자들 상에 배치된 컬러 변환층, 상기 컬러 변환층 상에 배치된 광학층, 및 상기 광학층 상에 배치된 유기층을 포함하며, 상기 광학층 및 상기 유기층 중 적어도 하나는 상기 화소들 사이에 배치된 함몰 패턴들을 포함한다.
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公开(公告)号：WO2023003059A1
公开(公告)日：2023-01-26
申请号：PCT/KR2021/009456
申请日：2021-07-22
Applicant: 엘지전자 주식회사
Abstract: 본 발명은 디스플레이 장치 관련 기술 분야에 적용 가능하며, 예를 들어 마이크로 LED(Light Emitting Diode)를 이용한 디스플레이 장치 및 그 제조 방법에 관한 것이다. 이러한 본 발명은, 기판; 단위 화소 영역을 정의하는 격벽; 상기 단위 화소 영역에 위치하는 제1 전극; 상기 단위 화소 영역 내에서 상기 제1 전극에 제1형 전극이 전기적으로 접속되어 설치되는 반도체 발광 소자; 상기 반도체 발광 소자와 격벽 상에 형성되고, 상기 반도체 발광 소자 상측에서 높은 경사를 가지는 경사 코팅층; 및 상기 경사 코팅층 상에서 상기 반도체 발광 소자의 제2형 전극과 전기적으로 연결되는 제2 전극을 포함하여 구성될 수 있다.
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公开(公告)号：WO2023001950A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/070461
申请日：2022-07-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： GROETSCH, Stefan , SAIF, Bilal
IPC: F21S41/143 , F21S45/10 , H01L25/16 , H01L31/167 , F21S41/19 , H01L33/48 , H01L33/58 , H01L25/075 , H01L33/44 , H05B45/3725
Abstract: In the present disclosure, a lighting device (10) comprises: a housing frame (11), a cavity (12) which is enclosed by the housing frame (11), a light-emitting diode (LED, 13) which is mounted within the cavity (12), and a layered structure (14) which is configured to cover the cavity (12). The layered structure (14) comprises an aperture for light emitted by the LED (13). Therein, the layered structure (14) is configured to generate energy (Vhrv) from part of the light emitted by the LED (13). The device (10) further comprises: a capacitor (20) which is configured to store the energy (Vhrv) generated by the layered structure (14), the capacitor (20) being mechanically and electrically coupled to the layered structure (14).
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