Invention Application
- Patent Title: MEMS SCANNING MICROMIRROR MANUFACTURING METHOD
- Patent Title (中): MEMS扫描显微镜制造方法
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Application No.: PCT/IB2008053950Application Date: 2008-09-29
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Publication No.: WO2009044324A3Publication Date: 2009-05-28
- Inventor: KRASTEV KRASSIMIR T , NELLISSEN ANTONIUS J M , VAN LIEROP HENDRIKUS W L A M , SOEMERS HERMANUS M J R , SANDERS RENATUS H M
- Applicant: KONINKL PHILIPS ELECTRONICS NV , KRASTEV KRASSIMIR T , NELLISSEN ANTONIUS J M , VAN LIEROP HENDRIKUS W L A M , SOEMERS HERMANUS M J R , SANDERS RENATUS H M
- Assignee: KONINKL PHILIPS ELECTRONICS NV,KRASTEV KRASSIMIR T,NELLISSEN ANTONIUS J M,VAN LIEROP HENDRIKUS W L A M,SOEMERS HERMANUS M J R,SANDERS RENATUS H M
- Current Assignee: KONINKL PHILIPS ELECTRONICS NV,KRASTEV KRASSIMIR T,NELLISSEN ANTONIUS J M,VAN LIEROP HENDRIKUS W L A M,SOEMERS HERMANUS M J R,SANDERS RENATUS H M
- Priority: US97771707 2007-10-05
- Main IPC: G02B26/10
- IPC: G02B26/10
Abstract:
A MEMS scanning micromirror manufacturing method with a method for manufacturing a MEMS scanning micromirror having a cantilever beam including providing a silicon on insulator (SOI) wafer 200 having a first silicon layer 202, a second silicon layer 206, and an insulating layer 204 between the first silicon layer 202 and the second silicon layer 206, the thickness of the first silicon layer 202 being a final thickness of the cantilever beam 72; and fashioning the cantilever beam 72 from the first silicon layer 202 while maintaining the final thickness of the cantilever beam.
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