Invention Application
- Patent Title: LOW-COST DOUBLE STRUCTURE SUBSTRATES AND METHODS FOR THEIR MANUFACTURE
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Application No.: PCT/US2009/044825Application Date: 2009-05-21
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Publication No.: WO2010002516A3Publication Date: 2010-01-07
- Inventor: NGUYEN, Bich-yen , MAZURE, Carlos
- Applicant: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES , NGUYEN, Bich-yen , MAZURE, Carlos
- Applicant Address: Parc Technologique des Fontaines F-38190 Bernin FR
- Assignee: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES,NGUYEN, Bich-yen,MAZURE, Carlos
- Current Assignee: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES,NGUYEN, Bich-yen,MAZURE, Carlos
- Current Assignee Address: Parc Technologique des Fontaines F-38190 Bernin FR
- Agency: FANUCCI, Allan, A. @
- Priority: FR0803697 20080630; US61/093,896 20080903
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.
Information query
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