Invention Application
WO2010048094A2 PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION
审中-公开
采用增强型铜离子电镀技术的PVD CU种子悬臂再次溅镀
- Patent Title: PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION
- Patent Title (中): 采用增强型铜离子电镀技术的PVD CU种子悬臂再次溅镀
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Application No.: PCT/US2009061184Application Date: 2009-10-19
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Publication No.: WO2010048094A2Publication Date: 2010-04-29
- Inventor: CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
- Applicant: APPLIED MATERIALS INC , CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
- Assignee: APPLIED MATERIALS INC,CAO YONG,TANG XIANMIN,GUNG TZA-JING,GOPALRAJA PRABURAM
- Current Assignee: APPLIED MATERIALS INC,CAO YONG,TANG XIANMIN,GUNG TZA-JING,GOPALRAJA PRABURAM
- Priority: US25642808 2008-10-22
- Main IPC: H01L21/203
- IPC: H01L21/203
Abstract:
A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.
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