公开(公告)号：WO2003042424A1

公开(公告)日：2003-05-22

申请号：PCT/US2002/036940

申请日：2002-11-14

Applicant: APPLIED MATERIALS, INC. ,  DING, Peijun ,  TAO, Rong ,  XU, Zheng ,  LUBBEN, Daniel, C. ,  RENGARAJAN, Suraj ,  MILLER, Michael, A. ,  SUNDARRAJAN, Arvind ,  TANG, Xianmin ,  FORSTER, John, C. ,  FU, Jianming ,  MOSELY, Roderick, C. ,  CHEN, Fusen ,  GOPALRAJA, Praburam

Inventor： DING, Peijun ,  TAO, Rong ,  XU, Zheng ,  LUBBEN, Daniel, C. ,  RENGARAJAN, Suraj ,  MILLER, Michael, A. ,  SUNDARRAJAN, Arvind ,  TANG, Xianmin ,  FORSTER, John, C. ,  FU, Jianming ,  MOSELY, Roderick, C. ,  CHEN, Fusen ,  GOPALRAJA, Praburam

IPC: C23C14/34

CPC classification number: H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract translation: 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：WO2008027186A2

公开(公告)日：2008-03-06

申请号：PCT/US2007017967

申请日：2007-08-14

Applicant: APPLIED MATERIALS INC ,  WANG RONGJUN ,  CHUNG HUA ,  TANG XIANMIN ,  WANG JENN YUE ,  WANG WEI D ,  TANAKA YOICHIRO ,  YU JICK M ,  GOPALRAJA PRABURAM

Inventor： WANG RONGJUN ,  CHUNG HUA ,  TANG XIANMIN ,  WANG JENN YUE ,  WANG WEI D ,  TANAKA YOICHIRO ,  YU JICK M ,  GOPALRAJA PRABURAM

IPC: B32B7/00 ,  B05D5/12 ,  B32B3/00 ,  C23C14/00 ,  C23C16/00

CPC classification number: C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00

Abstract: A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).

Abstract translation: 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施例包括穿过介电层（86）的孔（88）中的RuTaN的阻挡层（132），RuTa的粘合层（112）和形成铜电镀衬垫的铜籽晶层（114）。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时，铝合金化成RuTa（192,194）具有防潮层。 铜触点（232,238）包括RuTa的不同合金分数，以将功函数移动到硅的掺杂类型（216,218）。

公开(公告)号：WO2007087067A3

公开(公告)日：2007-12-06

申请号：PCT/US2006049440

申请日：2006-12-28

Applicant: APPLIED MATERIALS INC ,  FU XINYU ,  FORSTER JOHN ,  YU JICK ,  BHATNAGAR AJAY ,  GOPALRAJA PRABURAM

Inventor： FU XINYU ,  FORSTER JOHN ,  YU JICK ,  BHATNAGAR AJAY ,  GOPALRAJA PRABURAM

IPC: B08B3/00 ,  H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/02068 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/76814

Abstract: A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source (52) produces a plasma primarily of hydrogen radicals H*. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter (62, 64), removes hydrogen and other ions from the output of the remote plasma source and a supply tube (54) from the remote plasma source includes a removable dielectric liner (66) in combination with dielectric showerhead (40) and manifold liner (58).

Abstract translation: 一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。 远程等离子体源（52）主要产生氢离子H *的等离子体。 氢气压力可以保持相对较低，例如在30毫乇。 任选地，可以将氢气加入到氢分压保持在150毫乇以下的处理气体中。 在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。 优选地，诸如磁性过滤器（62,64）的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管（54）包括可移除的电介质衬垫（66） 与介电喷头（40）和歧管衬套（58）组合。

公开(公告)号：WO2006121604A3

公开(公告)日：2007-09-13

申请号：PCT/US2006015523

申请日：2006-04-25

Applicant: APPLIED MATERIALS INC ,  WANG JENN YUE ,  WANG WEL D ,  WANG RONGJIUM ,  TANAKA YOICHIRO ,  CHUNG HUA ,  ZHANG HONG ,  YU JICK ,  GOPALRAJA PRABURAM ,  FU JIANMING

Inventor： WANG JENN YUE ,  WANG WEL D ,  WANG RONGJIUM ,  TANAKA YOICHIRO ,  CHUNG HUA ,  ZHANG HONG ,  YU JICK ,  GOPALRAJA PRABURAM ,  FU JIANMING

IPC: C23C14/34 ,  H01L21/44 ,  H01L27/095

CPC classification number: B32B15/018 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer (82) comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not require to be so. The barrier layer may be sputtered from a target (90) of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer (112) may be formed of an alloy of copper and ruthenium in contact to a barrier layer (70) over the dielectric (66).

Abstract translation: 用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。 阻挡层（82）包括诸如钌/钽合金的难熔贵金属合金的导电金属，其可以是无定形的，尽管不需要这样。 阻挡层可以从类似组成的靶（90）溅射。 阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。 铜高贵种子层（112）可以由铜和钌的合金形成，与电介质（66）上的阻挡层（70）接触。

公开(公告)号：WO2007102970A3

公开(公告)日：2008-10-09

申请号：PCT/US2007003482

申请日：2007-02-08

Applicant: APPLIED MATERIALS INC ,  TANG XIANMIN ,  GOPALRAJA PRABURAM ,  WANG JENN YUE ,  YU JICK

Inventor： TANG XIANMIN ,  GOPALRAJA PRABURAM ,  WANG JENN YUE ,  YU JICK

IPC: C23C14/35

CPC classification number: C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

Abstract: A substrate processing method practiced in a plasma sputter reactor (8) including an RF coil (44) and two or more coaxial electromagnets (78, 80), at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

Abstract translation: 在包括RF线圈（44）和两个或更多个同轴电磁体（78,80）的等离子体溅射反应器（8）中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。

公开(公告)号：WO2008027186A3

公开(公告)日：2008-03-06

申请号：PCT/US2007/017967

申请日：2007-08-14

Applicant: APPLIED MATERIALS, INC. ,  WANG, Rongjun ,  CHUNG, Hua ,  TANG, Xianmin ,  WANG, Jenn, Yue ,  WANG, Wei, D. ,  TANAKA, Yoichiro ,  YU, Jick, M. ,  GOPALRAJA, Praburam

Inventor： WANG, Rongjun ,  CHUNG, Hua ,  TANG, Xianmin ,  WANG, Jenn, Yue ,  WANG, Wei, D. ,  TANAKA, Yoichiro ,  YU, Jick, M. ,  GOPALRAJA, Praburam

IPC: C23C14/34 ,  H01L21/302

Abstract: A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).

公开(公告)号：WO2007102970A2

公开(公告)日：2007-09-13

申请号：PCT/US2007/003482

申请日：2007-02-08

Applicant: APPLIED MATERIALS, INC. ,  TANG, Xianmin ,  GOPALRAJA, Praburam ,  WANG, Jenn, Yue ,  YU, Jick

Inventor： TANG, Xianmin ,  GOPALRAJA, Praburam ,  WANG, Jenn, Yue ,  YU, Jick

IPC: C23C14/32

CPC classification number: C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

Abstract: A substrate processing method practiced in a plasma sputter reactor (8) including an RF coil (44) and two or more coaxial electromagnets (78, 80), at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

Abstract translation: 在包括RF线圈（44）和两个或更多个同轴电磁体（78,80）的等离子体溅射反应器（8）中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。

公开(公告)号：WO2006121604A2

公开(公告)日：2006-11-16

申请号：PCT/US2006/015523

申请日：2006-04-25

Applicant: APPLIED MATERIALS, INC. ,  WANG, Jenn, Yue ,  WANG, Wel, D. ,  WANG, Rongjium ,  TANAKA, Yoichiro ,  CHUNG, Hua ,  ZHANG, Hong ,  YU, Jick ,  GOPALRAJA, Praburam ,  FU, Jianming

Inventor： WANG, Jenn, Yue ,  WANG, Wel, D. ,  WANG, Rongjium ,  TANAKA, Yoichiro ,  CHUNG, Hua ,  ZHANG, Hong ,  YU, Jick ,  GOPALRAJA, Praburam ,  FU, Jianming

IPC: B32B3/00

CPC classification number: B32B15/018 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/76844 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  H01L2924/00

Abstract: A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer (82) comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not require to be so. The barrier layer may be sputtered from a target (90) of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer (112) may be formed of an alloy of copper and ruthenium in contact to a barrier layer (70) over the dielectric (66).

Abstract translation: 用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。 阻挡层（82）包括诸如钌/钽合金的难熔贵金属合金的导电金属，其可以是无定形的，尽管不需要这样。 阻挡层可以从类似组成的靶（90）溅射。 阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。 铜高贵种子层（112）可以由铜和钌的合金形成，与电介质（66）上的阻挡层（70）接触。

公开(公告)号：WO2010048094A3

公开(公告)日：2010-04-29

申请号：PCT/US2009/061184

申请日：2009-10-19

Applicant: APPLIED MATERIALS, INC. ,  CAO, Yong ,  TANG, Xianmin ,  GUNG, Tza-Jing ,  GOPALRAJA, Praburam

Inventor： CAO, Yong ,  TANG, Xianmin ,  GUNG, Tza-Jing ,  GOPALRAJA, Praburam

IPC: H01L21/203

Abstract: A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.

公开(公告)号：WO2010048094A2

公开(公告)日：2010-04-29

申请号：PCT/US2009061184

申请日：2009-10-19

Applicant: APPLIED MATERIALS INC ,  CAO YONG ,  TANG XIANMIN ,  GUNG TZA-JING ,  GOPALRAJA PRABURAM

Inventor： CAO YONG ,  TANG XIANMIN ,  GUNG TZA-JING ,  GOPALRAJA PRABURAM

IPC: H01L21/203

CPC classification number: C23C14/185 ,  C23C14/046 ,  C23C14/5833 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76883

Abstract: A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.

Abstract translation: 提供了用于在图案化衬底上沉积金属的方法和装置。 在具有第一能量的物理气相沉积工艺中形成金属层。 使用第二能量在金属层上执行第二物理气相沉积工艺，其中沉积与脆性和塑性表面改性工艺相互作用以在基板上形成基本上共形的金属层。