Invention Application
- Patent Title: SILICON BASED OPTO-ELECTRIC CIRCUITS
- Patent Title (中): 硅基光电路
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Application No.: PCT/US2010/021444Application Date: 2010-01-20
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Publication No.: WO2010085459A1Publication Date: 2010-07-29
- Inventor: TABATABAIE, Kamal , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P. , IP, Kelly, P.
- Applicant: RAYTHEON COMPANY , TABATABAIE, Kamal , LAROCHE, Jeffrey, R. , KAPER, Valery, S. , BETTENCOURT, John, P. , IP, Kelly, P.
- Applicant Address: 870 Winter Street Waltham, MA 02451-1449 US
- Assignee: RAYTHEON COMPANY,TABATABAIE, Kamal,LAROCHE, Jeffrey, R.,KAPER, Valery, S.,BETTENCOURT, John, P.,IP, Kelly, P.
- Current Assignee: RAYTHEON COMPANY,TABATABAIE, Kamal,LAROCHE, Jeffrey, R.,KAPER, Valery, S.,BETTENCOURT, John, P.,IP, Kelly, P.
- Current Assignee Address: 870 Winter Street Waltham, MA 02451-1449 US
- Agency: MOFFORD, Donald, F. et al.
- Priority: US12/356,252 20090120
- Main IPC: H01S5/026
- IPC: H01S5/026 ; H01S5/183 ; H01L21/331
Abstract:
A semiconductor structure, comprising: a substrate (12); a seed layer (16) over an upper surface of the substrate (12); a semiconductor layer (20) disposed over the seed layer (16); a transistor device (22, 24) in the semiconductor layer (20); wherein the substrate (12) has an aperture (42) therein, such aperture (42) extending from a bottom surface of the substrate (12) and terminating on a bottom surface of the seed layer (16); and an opto-electric structure (44) disposed on the bottom surface of the seed layer (16).
Information query
