METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE

Invention Application

WO2010117964A3 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开

Title translation: 具有减少损坏的低K电介质蚀刻方法

Please log in to see more content

Patent Title: METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
Patent Title (中): 具有减少损坏的低K电介质蚀刻方法
Application No.: PCT/US2010030008

Application Date: 2010-04-05
Publication No.: WO2010117964A3

Publication Date: 2011-01-13
Inventor: JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
Applicant: LAM RES CORP , JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
Assignee: LAM RES CORP,JI BING,TAKESHITA KENJI,BAILEY ANDREW D III,HUDSON ERIC A,MORAVEJ MARYAM,SIRARD STEPHEN M,KO JUNGMIN,LE DANIEL,HEFTY ROBERT C,CHENG YU,DELGADINO GERARDO A,YEN BI-MING
Current Assignee: LAM RES CORP,JI BING,TAKESHITA KENJI,BAILEY ANDREW D III,HUDSON ERIC A,MORAVEJ MARYAM,SIRARD STEPHEN M,KO JUNGMIN,LE DANIEL,HEFTY ROBERT C,CHENG YU,DELGADINO GERARDO A,YEN BI-MING
Priority: US16811509 2009-04-09
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H05H1/34

METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE

Abstract:

A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract(Chinese):

通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

Information query

Global Dossier Patent Scope Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀