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    METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE
    1.
    发明申请
    METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
    修复低K介电损伤的方法

    公开(公告)号：WO2011050062A2

    公开(公告)日：2011-04-28

    申请号：PCT/US2010/053377

    申请日：2010-10-20

    Applicant: LAM RESEARCH CORPORATION ,  SIRARD, Stephen, M. ,  TAKESHITA, Kenji ,  BAILEY III, Andrew D.

    Inventor： SIRARD, Stephen, M. ,  TAKESHITA, Kenji ,  BAILEY III, Andrew D.

    IPC: H01L21/3105 ,  H01L21/311

    CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

    Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH 4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

    Abstract translation: 提供了一种用有机化合物修复对硅基低k电介质层的损伤的方法，其中损伤取代了附着于硅的羟基与硅连接的甲基。 提供包含CH 4气体的修复气体。 维修气体形成等离子体，同时保持压力低于50毫托。 连接在硅上的羟基被修复气体形成的等离子体中的甲基替代。

    METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE
    3.
    发明申请
    METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
    修复低K电介质损伤的方法

    公开(公告)号：WO2011050062A3

    公开(公告)日：2011-08-04

    申请号：PCT/US2010053377

    申请日：2010-10-20

    Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

    Inventor： SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

    IPC: H01L21/3105 ,  H01L21/311

    CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

    Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

    Abstract translation: 提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。 提供了包含CH 4气体的修复气体。 将修复气体形成为等离子体，同时保持低于50mTorr的压力。 与由修复气体形成的等离子体中的甲基取代成硅的羟基。

    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE
    5.
    发明申请
    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
    用于修复低K介电损伤的方法

    公开(公告)号：WO2011050171A4

    公开(公告)日：2011-10-20

    申请号：PCT/US2010053564

    申请日：2010-10-21

    Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

    Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

    IPC: H01L21/31

    CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

    Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

    Abstract translation: 提供了一种用有机化合物对硅基低k电介质层的损伤进行调谐修复的方法，其中损伤取代了附着于硅的羟基与硅连接的甲基。 提供前体气体，其包含表示为Si-（R）x（OR'）y的第一修复剂，其中y≥1并且x + y = 4，并且其中R是烷基或芳基，并且R'是 烷基或芳基和第二修复剂，表示为Si-（R）x（OR'）yR“，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基 或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 第一修复剂和第二修复剂中的一些结合到低k电介质以形成第一修复剂和第二修复剂的单层。

    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE
    6.
    发明申请
    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开

    公开(公告)号：WO2011050171A3

    公开(公告)日：2011-09-01

    申请号：PCT/US2010053564

    申请日：2010-10-21

    Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

    Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

    IPC: H01L21/31

    CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

    Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE
    7.
    发明申请
    METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
    用于修复低K电介质损伤的方法

    公开(公告)号：WO2011050171A2

    公开(公告)日：2011-04-28

    申请号：PCT/US2010/053564

    申请日：2010-10-21

    Applicant: LAM RESEARCH CORPORATION ,  SIRARD, Stephen M. ,  DEYOUNG, James ,  TURMEL, Odette

    Inventor： SIRARD, Stephen M. ,  DEYOUNG, James ,  TURMEL, Odette

    IPC: H01L21/31

    CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

    Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

    Abstract translation: 提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法，其中损伤用连接到硅上的羟基连接到硅上的甲基代替。 提供前体气体，其包含以Si-（R）x（OR'）y表示的第一修复剂，其中y≥1且x + y = 4，并且其中R为烷基或芳基，R'为 烷基或芳基，第二修饰剂以Si-（R）x（OR'）yR“表示，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基 或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。

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