Invention Application
- Patent Title: MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION
- Patent Title (中): 磁性隧道接头装置和制造
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Application No.: PCT/US2010057891Application Date: 2010-11-23
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Publication No.: WO2011066324A3Publication Date: 2011-10-20
- Inventor: LI XIA , KANG SEUNG H , ZHU XIAOCHUN
- Applicant: QUALCOMM INC , LI XIA , KANG SEUNG H , ZHU XIAOCHUN
- Assignee: QUALCOMM INC,LI XIA,KANG SEUNG H,ZHU XIAOCHUN
- Current Assignee: QUALCOMM INC,LI XIA,KANG SEUNG H,ZHU XIAOCHUN
- Priority: US62626909 2009-11-25
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L27/22 ; H01L43/12 ; H04B7/005 ; H04W52/12 ; H04W52/26 ; H04W52/34 ; H04W52/44 ; H04W52/54 ; H04W72/12
Abstract:
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction structure (202) above a bottom electrode (110, 702). The method also includes forming a diffusion barrier layer (302, 402) above and adjacent to the magnetic tunnel junction structure. The method further includes etching back the diffusion barrier layer, removing the diffusion barrier layer above the magnetic tunnel junction structure. The method also includes connecting a top of the magnetic tunnel junction structure to a conductive layer (604, 704).
Information query
