Invention Application
WO2012008789A3 METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET
审中-公开
在低温下生产石墨的方法，使用其进行石墨直接转移的方法和石墨片
- Patent Title: METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET
- Patent Title (中): 在低温下生产石墨的方法，使用其进行石墨直接转移的方法和石墨片
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Application No.: PCT/KR2011005213Application Date: 2011-07-15
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Publication No.: WO2012008789A3Publication Date: 2012-05-31
- Inventor: HONG BYUNG HEE , AHN JONG-HYUN , YOO JI BEOM , BAE SU KANG , JUNG MYUNG HEE , JANG HOUK , LEE YOUNGBIN , KIM SANG JIN
- Applicant: UNIV SUNGKYUNKWAN FOUND , SAMSUNG TECHWIN CO LTD , HONG BYUNG HEE , AHN JONG-HYUN , YOO JI BEOM , BAE SU KANG , JUNG MYUNG HEE , JANG HOUK , LEE YOUNGBIN , KIM SANG JIN
- Assignee: UNIV SUNGKYUNKWAN FOUND,SAMSUNG TECHWIN CO LTD,HONG BYUNG HEE,AHN JONG-HYUN,YOO JI BEOM,BAE SU KANG,JUNG MYUNG HEE,JANG HOUK,LEE YOUNGBIN,KIM SANG JIN
- Current Assignee: UNIV SUNGKYUNKWAN FOUND,SAMSUNG TECHWIN CO LTD,HONG BYUNG HEE,AHN JONG-HYUN,YOO JI BEOM,BAE SU KANG,JUNG MYUNG HEE,JANG HOUK,LEE YOUNGBIN,KIM SANG JIN
- Priority: KR20100068634 2010-07-15
- Main IPC: C01B31/02
- IPC: C01B31/02 ; C23C16/26 ; C23C16/50
Abstract:
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500°C or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
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