公开(公告)号：WO2023272951A1

公开(公告)日：2023-01-05

申请号：PCT/CN2021/118694

申请日：2021-09-16

Applicant: 长鑫存储技术有限公司

Inventor： 杨蒙蒙 ,  王晓玲

IPC: H01L21/28 ,  H01L29/51 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  C23C16/45536 ,  H01J37/36 ,  H01L21/0217 ,  H01L21/02274

Abstract: 本申请公开了一种薄膜沉积方法及半导体器件。本申请中的薄膜沉积方法包括：提供基底；采用薄膜沉积技术在基底上进行薄膜沉积形成第一沉积层；通入清除气体，对第一沉积层进行清除杂质处理，形成净化沉积层；由净化沉积层形成薄膜层。本申请中的薄膜沉积方法采用薄膜沉积技术形成沉积层，并对沉积层进行杂质处理，使形成的薄膜层的杂质含量大大降低。将该薄膜层覆盖在栅极表面制备成半导体器件，可以更好得保护栅极，显著提高半导体器件的寿命。

公开(公告)号：WO2022250948A1

公开(公告)日：2022-12-01

申请号：PCT/US2022/028449

申请日：2022-05-10

Applicant: APPLIED MATERIALS, INC.

Inventor： SCUDDER, Lance, A. ,  CHATTERJEE, Sukti ,  ISHIKAWA, David, Masayuki ,  MELNIK, Yuriy, V. ,  SINGH, Vibhas

IPC: C23C16/50 ,  C23C16/30 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  A61M5/31 ,  A61M5/315 ,  B01L3/00

Abstract: Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.

公开(公告)号：WO2022245742A1

公开(公告)日：2022-11-24

申请号：PCT/US2022/029471

申请日：2022-05-16

Applicant: VERSUM MATERIALS US, LLC

Inventor： ENTLEY, William Robert ,  ACHTYL, Jennifer Lynn Anne ,  LEI, Xinjian ,  XIAO, Manchao ,  SPENCE, Daniel P. ,  RIDGEWAY, Robert Gordon ,  VRTIS, Raymond N.

IPC: C23C16/40 ,  C23C16/50 ,  H01L21/02

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ~ 2.70 to ~ 3.50, an elastic modulus of from ~ 6 to ~ 32 GPa, and an at. % carbon from ~ 10 to ~ 35 as measured by XPS.

公开(公告)号：WO2022183136A1

公开(公告)日：2022-09-01

申请号：PCT/US2022/018231

申请日：2022-02-28

Applicant: HZO, INC.

Inventor： LAWRENCE, Benjamin ,  PULSIPHER, Daniel ,  ZAMBOV, Ludmil ,  CHAUBEY, Pravin ,  WINTERROTH, John ,  NAGY, Attila

IPC: H01L21/687 ,  C23C14/50 ,  C23C14/56 ,  C23C16/458 ,  C23C16/50 ,  H01L21/67

Abstract: A plasma-enhanced chemical vapor deposition coating system includes a deposition chamber including one or more zones of processing, an electrode centrally located within the deposition chamber, wherein the electrode forms a central axis in the deposition chamber, and a carousel configured to carry at least one substrate. The carousel is configured to move axially in a direction along the central axis from a first end of the deposition chamber to a second end of the deposition chamber. The carousel is further configured to rotate around the central axis such that the substrate is oriented in a plurality of different directions relative to the central axis.

公开(公告)号：WO2022132499A1

公开(公告)日：2022-06-23

申请号：PCT/US2021/062203

申请日：2021-12-07

Applicant: APPLIED MATERIALS, INC.

Inventor： PARIMI, Venkata Sharat Chandra ,  HUANG, Zubin ,  PATIL, Manjunath Veerappa Chobari ,  PATHAK, Nitin ,  YANG, Yi ,  RAMAMURTHI, Badri, N. ,  NGUYEN, Truong Van ,  CHENG, Rui ,  KEDLAYA, Diwakar

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/04 ,  C23C16/50 ,  H01L21/02

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：WO2022095747A1

公开(公告)日：2022-05-12

申请号：PCT/CN2021/126269

申请日：2021-10-26

Applicant: 上海征世科技股份有限公司

Inventor： 王涛 ,  王箫 ,  满卫东 ,  张雪梅 ,  朱长征 ,  徐念 ,  龚闯

IPC: C23C16/50 ,  C23C16/02

Abstract: 一种金刚石表面改性的方法及应用，该方法包括金刚石表面清洗工序和在金刚石表面形成涂层的工序，涂层包括位于最表面的表涂层和可选的位于表涂层与金刚石表面之间的过渡涂层，表涂层由氟碳化合物和/或氟硅化合物形成，过渡涂层有一层或二层或更多层，且每一层由选自氟碳化合物、氟硅化合物、碳、硅、碳化硅中的一种或多种的组合形成。通过在金刚石表面采用氟碳化合物和/或氟硅化合物进行修饰改性，改善金刚石表面的色彩、透光度、亲水性能、抗氧化性能等，拓展表面改性后的金刚石在珠宝首饰方面的应用效果，还可做光学窗口材料、医学材料、研磨材料及切削材料等。拓展了金刚石的应用领域和使用效果。

公开(公告)号：WO2022033004A1

公开(公告)日：2022-02-17

申请号：PCT/CN2021/075700

申请日：2021-02-07

Applicant: 浙江正泰太阳能科技有限公司 ,  海宁正泰新能源科技有限公司

Inventor： 马玉超 ,  余浩 ,  张晓攀 ,  单伟 ,  何胜 ,  徐伟智

IPC: C30B33/10 ,  C30B29/06 ,  C23C16/50 ,  C23C16/34 ,  C30B31/00 ,  C23C16/455 ,  C23C16/40 ,  H01L31/0236 ,  H01L31/18

Abstract: 一种单晶硅片的单面制绒工艺及太阳能电池片的制备方法，单面制绒工艺包括以下步骤：A)将掩膜胶液涂覆至单品硅片的背面，得到背面有掩膜涂层的单晶硅片；所述掩膜胶液包括：氧化硅：0.1～1份，助剂：0.5～2份，木质素纤维：0.1～1份，阿拉伯胶：10～100份；B)将所述背面有掩膜涂层的单晶硅片在碱性试剂中制绒后进行酸洗，去除掩膜涂层，得到单面制绒的单晶硅片。

公开(公告)号：WO2021261868A1

公开(公告)日：2021-12-30

申请号：PCT/KR2021/007770

申请日：2021-06-21

Applicant: 울산과학기술원 ,  충남대학교 산학협력단

Inventor： 이종훈 ,  김의태 ,  정홍식 ,  서준기 ,  임동혁 ,  이석우

IPC: H01L21/02 ,  H01L49/02 ,  H01L27/108 ,  C23C16/22 ,  C23C16/52 ,  C23C16/50

Abstract: 본 발명의 기술적 사상에 따른 반도체 소자는, 활성 영역을 정의하는 기판, 활성 영역 상에 배치되는 게이트 유전막, 게이트 유전막 상에 배치되는 게이트 전극, 게이트 전극의 양측의 활성 영역에 배치되는 소스/드레인 영역, 소스/드레인 영역에 연결되는 컨택 구조물, 및 컨택 구조물에 연결되는 커패시터를 포함하고, 커패시터는 하부 전극, 커패시터 유전막, 및 상부 전극을 포함하고, 커패시터 유전막은 고유전 탄화수소 박막을 포함한다.

公开(公告)号：WO2021261584A1

公开(公告)日：2021-12-30

申请号：PCT/JP2021/024132

申请日：2021-06-25

Applicant: 株式会社神戸製鋼所

Inventor： 碇　賀充 ,  藤井　博文

IPC: B22F1/02 ,  C23C14/00 ,  C23C14/32 ,  C23C14/34 ,  C23C14/50 ,  C23C16/44 ,  C23C16/442 ,  C23C16/50

Abstract: 粉体成膜装置（１）は、底面（１３）を有する容器（１０）を含み、容器（１０）の底面（１３）に配置された粉体（Ｆ）を容器（１０）内でかつ粉体落下空間（Ｓ）以外の領域において上方に搬送する上方搬送経路（３１）が形成され、上方搬送経路（３１）に沿って上方に搬送された粉体（Ｆ）を粉体落下空間（Ｓ）を通じて底面（１３）に落下させることが可能なように構成される装置本体と、成膜材料を粉体（Ｆ）の表面に成膜することが可能な成膜可能状態にする成膜源と、を備える。前記成膜源は、容器（１０）よりも上方で底面（１３）に対して上下方向に対向する位置及び容器（１０）内の少なくとも一方において成膜材料を成膜可能状態にして、当該成膜可能状態となった成膜材料を粉体落下空間（Ｓ）を通じて底面（１３）に供給するように構成される。

公开(公告)号：WO2021206998A1

公开(公告)日：2021-10-14

申请号：PCT/US2021/025366

申请日：2021-04-01

Applicant: APPLIED MATERIALS, INC.

Inventor： SHENG, Shuran ,  ZHANG, Lin ,  WERNER, Joseph C.

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

Abstract: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.