公开(公告)号：WO2012118350A3

公开(公告)日：2012-10-26

申请号：PCT/KR2012001589

申请日：2012-03-02

Applicant: UNIV SUNGKYUNKWAN RES & BUS ,  HONG BYUNG HEE ,  KIM EUN SEON

Inventor： HONG BYUNG HEE ,  KIM EUN SEON

IPC: C01B31/02 ,  H01L21/329 ,  H01L21/761

CPC classification number: H01L21/041 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/22 ,  H01L21/761 ,  H01L29/1606

Abstract: The present invention provides a method for n-doping graphene, an n-doped graphene prepared thereby, and an element including the n-dope graphene, the method comprising: a step of growing the graphene on a substrate by supplying a reaction gas containing a carbon source and heat on the substrate and reacting same; and n-doping the graphene by means of a doping solution or a vapor containing an n-type dopant.

Abstract translation: 本发明提供了一种用于n掺杂石墨烯的方法，由此制备的n掺杂石墨烯以及包括该n掺杂石墨烯的元件，所述方法包括：通过将包含石墨烯的反应气体 碳源和基底上的热量并使其反应; 并借助掺杂溶液或含有n型掺杂剂的蒸气对石墨烯进行n掺杂。

公开(公告)号：WO2011108878A3

公开(公告)日：2012-01-12

申请号：PCT/KR2011001491

申请日：2011-03-04

Applicant: UNIV SUNGKYUNKWAN FOUND ,  HONG BYUNG HEE ,  CHOI JEABOONG ,  KIM YOUNG JIN ,  KIM HYEONG KEUN ,  BAE SU KANG ,  KANG JUNMO

Inventor： HONG BYUNG HEE ,  CHOI JEABOONG ,  KIM YOUNG JIN ,  KIM HYEONG KEUN ,  BAE SU KANG ,  KANG JUNMO

IPC: H05K9/00

CPC classification number: H05K9/0084 ,  B32B37/16 ,  B82Y30/00 ,  C23C16/26 ,  H05K9/0081 ,  Y10T156/10

Abstract: The present application relates to a method for shielding electromagnetic waves by using graphene inside or outside an electromagnetic wave generating source and/or by using graphene formed on a substrate, and an electromagnetic shielding material including the graphene.

Abstract translation: 本申请涉及通过在电磁波发生源内部或外部使用石墨烯和/或通过使用形成在基板上的石墨烯和包括石墨烯的电磁屏蔽材料来屏蔽电磁波的方法。

公开(公告)号：WO2011081473A3

公开(公告)日：2011-11-17

申请号：PCT/KR2010009555

申请日：2010-12-30

Applicant: UNIV SUNGKYUNKWAN FOUND ,  AHN JONGHYUN ,  HONG BYUNG HEE ,  JANG HOUK ,  JANG SUKJAE ,  KOO JAE BON

Inventor： AHN JONGHYUN ,  HONG BYUNG HEE ,  JANG HOUK ,  JANG SUKJAE ,  KOO JAE BON

IPC: B41M5/03

CPC classification number: H01L29/458

Abstract: The present invention relates to a transparent graphene electrode, a flexible silicon thin film semiconductor device containing the same, and a preparation method thereof. A flexible and transparent thin film semiconductor device can be easily prepared by using the transparent graphene electrode comprising a large-area graphene film prepared by chemical vapor deposition as a conductive film.

Abstract translation: 透明石墨烯电极，包含其的柔性硅薄膜半导体器件及其制备方法技术领域本发明涉及透明石墨烯电极， 通过使用包含通过化学气相沉积制备的大面积石墨烯膜的透明石墨烯电极作为导电膜，可以容易地制备柔性且透明的薄膜半导体器件。

公开(公告)号：WO2008039496A2

公开(公告)日：2008-04-03

申请号：PCT/US2007/020778

申请日：2007-09-26

Applicant: THE TRUSTEES OF COLUMBIA UNIVERSITY ,  KIM, Philip ,  HONG, Byung Hee ,  LEE, Ju Young ,  KIM, Kwang, S.

Inventor： KIM, Philip ,  HONG, Byung Hee ,  LEE, Ju Young ,  KIM, Kwang, S.

IPC: H01L21/304

CPC classification number: B01J21/185 ,  B01J23/745 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/168 ,  C01B2202/06 ,  C01B2202/34 ,  D01F9/127 ,  Y10S977/742 ,  Y10S977/752 ,  Y10T428/2918

Abstract: Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.

Abstract translation: 可以通过将二级室放置在反应器室内来限制流动以提供层流来形成超长碳纳米管。 可以从多壁碳纳米管（MWNT）连续地提取内壳，例如通过在其两端之间的位置处对细长管状侧壁施加横向力。 提取的壳可以具有变化的电和机械性能，其可用于产生有用的材料，电气装置和机械装置。

公开(公告)号：WO2012099385A3

公开(公告)日：2012-12-06

申请号：PCT/KR2012000417

申请日：2012-01-18

Applicant: UNIV SUNGKYUNKWAN RES & BUS ,  HONG BYUNG HEE ,  CHOI JAEBOONG ,  KIM YOUNGJIN ,  KIM KEUN SOO ,  KANG JUNMO ,  KIM HYEONGKEUN

Inventor： HONG BYUNG HEE ,  CHOI JAEBOONG ,  KIM YOUNGJIN ,  KIM KEUN SOO ,  KANG JUNMO ,  KIM HYEONGKEUN

IPC: B82B3/00

CPC classification number: B32B37/025 ,  B82B3/0047 ,  B82B3/0076 ,  Y10T156/1153

Abstract: The present invention relates to a method for transferring graphene using a hot press, comprising: a step of contacting graphene, having a heat-peelable sheet attached thereto, with a target substrate; and a step of pressing and heating the graphene having the heat-peelable sheet attached thereto and the target substrate using the upper press and lower press of a hot press so as to separate the heat-peelable sheet and the graphene and transfer the separated graphene to the target substrate. The present invention also relates to a graphene-transfer hot press apparatus for said transfer process.

Abstract translation: 本发明涉及一种使用热压机转移石墨烯的方法，包括：将具有附着于其上的可热剥离片材的石墨烯与目标衬底接触的步骤; 以及使用上压机和热压机的下压机按压和加热附着有热剥离片的石墨烯和目标基板的步骤，以将热可剥离片材和石墨烯分离并将分离的石墨烯转移到 目标基板。 本发明还涉及用于所述转移过程的石墨烯转移热压装置。

公开(公告)号：WO2012105777A2

公开(公告)日：2012-08-09

申请号：PCT/KR2012000690

申请日：2012-01-30

Applicant: SAMSUNG TECHWIN CO LTD ,  UNIV SUNGKYUNKWAN RES & BUS ,  SONG YOUNG-IL ,  KIM HYEONG-KEUN ,  HONG BYUNG-HEE ,  AHN JONG-HYUN

Inventor： SONG YOUNG-IL ,  KIM HYEONG-KEUN ,  HONG BYUNG-HEE ,  AHN JONG-HYUN

IPC: C01B31/02 ,  B01J19/24 ,  B01J23/755 ,  C01B31/12

CPC classification number: B82Y40/00 ,  B01J23/04 ,  B01J23/16 ,  B01J23/26 ,  B01J23/28 ,  B01J23/30 ,  B01J23/34 ,  B01J23/42 ,  B01J23/464 ,  B01J23/52 ,  B01J23/72 ,  B01J23/745 ,  B01J23/75 ,  B01J23/755 ,  B82Y30/00 ,  C01B32/186

Abstract: A method and an apparatus for synthesizing graphene. The method includes loading catalyst metals into a chamber in the horizontal direction or the vertical direction; increasing sizes of grains of the catalyst metals by heating the catalyst metals; raising a temperature inside the chamber while providing a vapor carbon source in the catalyst metals; and forming graphene by cooling the catalyst metals.

Abstract translation: 一种用于合成石墨烯的方法和装置。 该方法包括将催化剂金属在水平方向或垂直方向上装入室内; 通过加热催化剂金属来增加催化剂金属颗粒的尺寸; 提高室内的温度，同时在催化剂金属中提供蒸汽碳源; 并通过冷却催化剂金属形成石墨烯。

公开(公告)号：WO2011087301A3

公开(公告)日：2011-12-01

申请号：PCT/KR2011000258

申请日：2011-01-13

Applicant: UNIV SUNGKYUNKWAN FOUND ,  AHN JONGHYUN ,  HONG BYUNG HEE ,  LEE YOUNGBIN ,  KIM HYEONG KEUN ,  BAE SU KANG

Inventor： AHN JONGHYUN ,  HONG BYUNG HEE ,  LEE YOUNGBIN ,  KIM HYEONG KEUN ,  BAE SU KANG

IPC: B41M5/03 ,  B41M5/10

CPC classification number: H01L51/5253 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186 ,  C01B32/194 ,  C01B2204/02 ,  C01B2204/04 ,  H01L31/048 ,  H01L51/448 ,  H01L51/5256 ,  H01L2251/5338 ,  Y02E10/549 ,  Y10T428/1324 ,  Y10T428/30 ,  Y10T428/31678

Abstract: The present invention relates to a method for forming a graphene protective film having gas and moisture barrier properties, to a graphene protective film formed by the method, and to the use thereof. A single-layer or multi-layer graphene protective film can be used as a material for a barrier coating or bags, and improves the gas and moisture barrier properties of a variety of devices in a wide array of industrial fields to thereby maintain the electrical characteristics of devices over a long period of time.

Abstract translation: 本发明涉及一种形成具有气体和水分阻隔性能的石墨烯保护膜的方法，涉及通过该方法形成的石墨烯保护膜及其用途。 可以使用单层或多层石墨烯保护膜作为阻隔涂层或袋的材料，并且改善各种工业领域中的各种装置的气体和水分阻隔性能，从而保持电特性 的设备。

公开(公告)号：WO2011043620A2

公开(公告)日：2011-04-14

申请号：PCT/KR2010006894

申请日：2010-10-08

Applicant: UNIV SUNGKYUNKWAN FOUND ,  KIM TAESUNG ,  KULKARNI ATUL ,  CHOI JAEBOONG ,  KIM HYEONG KEUN ,  KIM YOUNG JIN ,  HONG BYUNG HEE

Inventor： KIM TAESUNG ,  KULKARNI ATUL ,  CHOI JAEBOONG ,  KIM HYEONG KEUN ,  KIM YOUNG JIN ,  HONG BYUNG HEE

IPC: G02B6/00 ,  G01N21/00

CPC classification number: G02B6/0229 ,  G01N21/7703 ,  G01N2021/7713

Abstract: The invention relates to an optic fiber having a core in which carbon nano-structures are formed at a predetermined locus, a fiber optic chemical sensor using the optic fiber, and a method of forming the carbon nano-structure layer in the core of the optic fiber. The invention utilizes gas refractive index and the adsorption sensitivity of particles on the surface of the carbon nano-structure layer, and uses the carbon nano-structure layer in the core of the optic fiber as a sensor for particles of gas, liquid and the like.

Abstract translation: 本发明涉及一种具有核心的光纤，其中在预定轨迹上形成碳纳米结构，使用该光纤的光纤化学传感器，以及在该光学纤芯的核心中形成碳纳米结构层的方法 纤维。 本发明利用气体折射率和颗粒在碳纳米结构层表面的吸附敏感性，并将光纤纤芯中的碳纳米结构层用作气体，液体等颗粒的传感器 。

公开(公告)号：WO2012087065A3

公开(公告)日：2012-10-04

申请号：PCT/KR2011010038

申请日：2011-12-23

Applicant: UNIV SUNGKYUNKWAN RES & BUS ,  AHN JONG-HYUN ,  HONG BYUNG HEE ,  LEE YOUNG BIN ,  BAE SU KANG ,  KIM HYEONG KEUN

Inventor： AHN JONG-HYUN ,  HONG BYUNG HEE ,  LEE YOUNG BIN ,  BAE SU KANG ,  KIM HYEONG KEUN

IPC: G06F3/041

CPC classification number: G01R1/06 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F2203/04103 ,  G06F2203/04106

Abstract: Provided is a touch sensor for measuring a touch position and/or the degree of touching pressure by using graphin as an electrode and/or a strain gauge, and more particularly, to a touch sensor for simultaneously detecting pressure and position by means of change in resistance by using the graphin.

Abstract translation: 本发明提供一种触摸传感器，该触摸传感器通过将石墨素用作电极和/或应变计来测量触摸位置和/或触摸压力的程度，并且更具体地涉及通过改变触摸位置来同时检测压力和位置的触摸传感器 通过使用graphin来抵抗。

公开(公告)号：WO2012008789A3

公开(公告)日：2012-05-31

申请号：PCT/KR2011005213

申请日：2011-07-15

Applicant: UNIV SUNGKYUNKWAN FOUND ,  SAMSUNG TECHWIN CO LTD ,  HONG BYUNG HEE ,  AHN JONG-HYUN ,  YOO JI BEOM ,  BAE SU KANG ,  JUNG MYUNG HEE ,  JANG HOUK ,  LEE YOUNGBIN ,  KIM SANG JIN

Inventor： HONG BYUNG HEE ,  AHN JONG-HYUN ,  YOO JI BEOM ,  BAE SU KANG ,  JUNG MYUNG HEE ,  JANG HOUK ,  LEE YOUNGBIN ,  KIM SANG JIN

IPC: C01B31/02 ,  C23C16/26 ,  C23C16/50

CPC classification number: C01B31/0453 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/01 ,  C23C16/26

Abstract: The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500°C or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).

Abstract translation: 本发明涉及一种在低温下形成石墨烯的方法，涉及使用该方法直接转移石墨烯的方法和石墨烯片。 在低温下形成石墨烯的方法包括向形成在基板上的石墨烯生长用金属催化剂层供给含碳源气体，并通过电感耦合等离子体在500℃以下的低温下形成石墨烯 化学气相沉积（ICP-CVD）。