Invention Application
WO2013012682A2 COPPER INTERCONNECTS SEPARATED BY AIR GAPS AND METHOD OF MAKING THEREOF
审中-公开
通过空气隙分离的铜互连件及其制造方法
- Patent Title: COPPER INTERCONNECTS SEPARATED BY AIR GAPS AND METHOD OF MAKING THEREOF
- Patent Title (中): 通过空气隙分离的铜互连件及其制造方法
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Application No.: PCT/US2012/046490Application Date: 2012-07-12
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Publication No.: WO2013012682A2Publication Date: 2013-01-24
- Inventor: PURAYATH, Vinod R. , KAI, James K. , PACHAMUTHU, Jayavel , LIANG, Jarrett Jun , MATAMIS, George , HONMA, Ryoichi
- Applicant: SANDISK TECHNOLOGIES INC. , PURAYATH, Vinod R. , KAI, James K. , PACHAMUTHU, Jayavel , LIANG, Jarrett Jun , MATAMIS, George , HONMA, Ryoichi
- Applicant Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Assignee: SANDISK TECHNOLOGIES INC.,PURAYATH, Vinod R.,KAI, James K.,PACHAMUTHU, Jayavel,LIANG, Jarrett Jun,MATAMIS, George,HONMA, Ryoichi
- Current Assignee: SANDISK TECHNOLOGIES INC.,PURAYATH, Vinod R.,KAI, James K.,PACHAMUTHU, Jayavel,LIANG, Jarrett Jun,MATAMIS, George,HONMA, Ryoichi
- Current Assignee Address: Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 US
- Agency: RADOMSKY, Leon et al.
- Priority: US13/186,094 20110719
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532
Abstract:
A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps is located between an adjacent pair of at least the first portion of the plurality of bit lines.
Information query
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