Invention Application
- Patent Title: DRAM MEMORY INTERFACE
- Patent Title (中): DRAM内存接口
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Application No.: PCT/EP2012/067435Application Date: 2012-09-06
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Publication No.: WO2013034650A1Publication Date: 2013-03-14
- Inventor: BERTHOLOM, Cedric
- Applicant: ST-ERICSSON SA , BERTHOLOM, Cedric
- Applicant Address: Chemin du Champ-des-Filles 39 CH-1228 Plan-les-Ouates CH
- Assignee: ST-ERICSSON SA,BERTHOLOM, Cedric
- Current Assignee: ST-ERICSSON SA,BERTHOLOM, Cedric
- Current Assignee Address: Chemin du Champ-des-Filles 39 CH-1228 Plan-les-Ouates CH
- Agency: REINHARDT, Yves
- Priority: EP11368024.3 20110908; EP12305181.5 20120216
- Main IPC: G06F13/40
- IPC: G06F13/40 ; G11C5/06 ; G11C7/10 ; G11C11/4093 ; G11C7/02
Abstract:
It is proposed a DRAM memory interface (40) for transmitting signals between a memory controller device (50) and a DRAM memory device (52). The DRAM memory interface comprises: data lines (44) for transmitting data signals; one or more control line(s) for transmitting control signals; one or more address line(s) for transmitting address signals; for each line, a transmitter device (41) connected to a first end of the line and a receiver device (42) connected to a second end of the line; wherein: each line is a single ended line wherein a signal transmitted on the line is referenced to a first reference voltage line (46); and - each line has an termination (Z 1 , Z 2 ) on both the first and second ends of the line by connecting a first impedance (Z 1 ) to the first end of the line and a second impedance (Z 2 ) to the second end of the line.
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