Invention Application
WO2013039603A1 RESISTIVE SWITCHING DEVICES HAVING ALLOYED ELECTRODES AND METHODS OF FORMATION THEREOF
审中-公开
具有合金电极的电阻开关器件及其形成方法
- Patent Title: RESISTIVE SWITCHING DEVICES HAVING ALLOYED ELECTRODES AND METHODS OF FORMATION THEREOF
- Patent Title (中): 具有合金电极的电阻开关器件及其形成方法
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Application No.: PCT/US2012/046745Application Date: 2012-07-13
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Publication No.: WO2013039603A1Publication Date: 2013-03-21
- Inventor: LEE, Wei Ti , GOPALAN, Chakravarthy , MA, Yi , SHIELDS, Jeffrey , BLANCHARD, Philippe , JAMESON, John Ross , KOUSHAN, Foroozan Sarah , WANG, Janet , KELLAM, Mark
- Applicant: ADESTO TECHNOLOGIES CORPORATION , ADESTO TECHNOLOGIES FRANCE SARL , RAMBUS, INC. , LEE, Wei Ti , GOPALAN, Chakravarthy , MA, Yi , SHIELDS, Jeffrey , BLANCHARD, Philippe , JAMESON, John Ross , KOUSHAN, Foroozan Sarah , WANG, Janet , KELLAM, Mark
- Applicant Address: 1250 Borregas Ave. Sunnyvale, California 94089 US
- Assignee: ADESTO TECHNOLOGIES CORPORATION,ADESTO TECHNOLOGIES FRANCE SARL,RAMBUS, INC.,LEE, Wei Ti,GOPALAN, Chakravarthy,MA, Yi,SHIELDS, Jeffrey,BLANCHARD, Philippe,JAMESON, John Ross,KOUSHAN, Foroozan Sarah,WANG, Janet,KELLAM, Mark
- Current Assignee: ADESTO TECHNOLOGIES CORPORATION,ADESTO TECHNOLOGIES FRANCE SARL,RAMBUS, INC.,LEE, Wei Ti,GOPALAN, Chakravarthy,MA, Yi,SHIELDS, Jeffrey,BLANCHARD, Philippe,JAMESON, John Ross,KOUSHAN, Foroozan Sarah,WANG, Janet,KELLAM, Mark
- Current Assignee Address: 1250 Borregas Ave. Sunnyvale, California 94089 US
- Agency: CHAKRAVARTHI, Srinivasan
- Priority: US61/534,011 20110913
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A resistive switching device comprises a bottom electrode (115), a switching layer (130) disposed over the bottom electrode (115), and a electrode (150) disposed over the switching layer (130). The top electrode (150) comprises an alloy of a memory metal and an alloying element. The top electrode (150) provides a source of the memory metal. The memory metal is configured to change a state of the switching layer (130).
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